← 返回论文列表 📄 下载原文 PDF  ISSCC 2024 · 3.1
ISSCC 2024Session 3 · ANALOG TECHNIQUESAnalog Circuits

A PVT-Insensitive Sub-Ranging Current Reference Achieving 11.4ppm/°C from -20°C to 125°C

⚡ 本页包含 AI 生成的分析内容,仅供参考

📋 论文概要

该论文提出了一种PVT不敏感的亚分档电流基准电路,通过亚分档技术实现了在-20°C到125°C宽温度范围内仅11.4ppm/°C的极低温度系数,解决了传统电流基准温度稳定性不足的问题。

💡 主要创新点

核心指标
11.4ppm/°C温度系数,-20°C到125°C
重要性
发表年份
ISSCC 2024

🏷 关键词

电流基准温度稳定性亚分档PVT不敏感

📄 原文摘要

Daegu Gyeongbuk Institute of Science and Technology, Daegu, Korea 1 2 Improving the temperature stability of the reference current (IREF) is essential for the reliable operation of precision electronics for various applications, including automotive and industrial sensors. There are several approaches to generate a temperature-stable IREF, which include a weighted sum of PTAT and CTAT currents, dividing a reference voltage by a resistor with a similar temperature coefficient (TC) [1-3], and biasing a MOSFET at its zero-temperature-coefficient bias point [4]. While these techniques can remove the first-order TC, the remaining curvature due to the second-order TC limits the achievable temperature stability. In [5], the curvature in a reference current is corrected by using a curvature-corrected bandgap reference voltage and a switched capacitor resistor. However, it requires a stable and bulky reference oscillator (e.g., crystal).

👥 作者与机构

Pangi Park1, Junghyup Lee2, SeongHwan Cho1

Korea Advanced Institute of Science and Technology, Daejeon, Korea

分类:Analog Circuits · 年份:ISSCC 2024