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ISSCC 2024Session 32 · POWER AMPLIFICATION AND SIGNAL GENERATIONPower Management65nm CMOS

A 67.8-to-108.2GHz Power Amplifier with a Three-CoupledLine-Based Complementary-Gain-Boosting Technique Achieving 442GHz GBW and 23.1% peak PAE gain response of the input stage is also boosted at a high frequency to further compensate for the gain slope of the power stage and for enhancing the total bandwidth.

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📋 论文概要

该论文提出了一种基于三耦合线(TCL)的互补增益提升(CGB)技术,设计了一款工作频率为67.8-108.2GHz的功率放大器。通过分布式巴伦实现宽带高效输出匹配,并利用CGB技术使输入级和驱动级与输出级互补增益响应,从而扩展带宽并提升性能。

💡 主要创新点

工艺节点
65nm CMOS
重要性
发表年份
ISSCC 2024

🏷 关键词

功率放大器三耦合线互补增益提升毫米波65nm CMOS

📄 原文摘要

Weiping Wu, Xun Bao, Shulan Chen, Yan Wang, Lei Zhang The schematic of the prototype PA using the proposed TCL-based CGB technique is shown in Fig. 32.4.3. The PA consists of a CS output stage, a TCL-based CGB driver stage, and a hybrid TCL-based CGB input stage. A distributed balun is employed for broadband and efficient output matching. The input and driver stages achieve a complementary gain response versus the output stage by the proposed CGB technique. An LC and a coupled-line-based networks are incorporated for inter-stage matching and slight gain adjustment. Implemented in a 65nm CMOS technology, the PA occupies a core area of 0.039mm2. Tsinghua University, Beijing, China The ever-growing demand for high-speed data links and innovative applications has driven the rapid development of millimeter-wave (mm-wave) technologies. In recent years, the 70/80/90GHz bands have been proposed and applied for high-speed wireless

👥 作者与机构

In practice, the hybrid TCL network is wound into a compact footprint as shown in Fig., 32.4.3 to save the chip area.

分类:Power Management · 年份:ISSCC 2024