E-band (71-to-86GHz) GaN Power Amplifier with 4.37W Output Power and 18.5% PAE for 5G Backhaul

📋 论文概要

本文提出了一款工作在E波段（71-86GHz）的GaN功率放大器，实现了4.37W输出功率和18.5%的功率附加效率（PAE），旨在满足5G回传链路对高功率和高效率的需求。该设计解决了E波段频谱利用率低和功率放大器性能不足的问题。

💡 主要创新点

• 采用GaN工艺实现E波段高功率输出，达到4.37W，显著优于传统硅基或GaAs方案。
• 在71-86GHz频段内实现18.5%的PAE，兼顾了高功率和高效率。
• 针对5G回传应用优化，满足FCC/ETSI对EIRP的严格要求。

🏷 关键词

📄 原文摘要

Ericsson, Gothenburg, Sweden 3 University of Freiburg, Freiburg, Germany 1 2 Wireless data traffic has experienced explosive growth in recent years, primarily due to the commercialization of 5G networks. To keep up with this demand, telecom providers are shifting to E-band (71 to 76GHz, 81 to 86GHz), supporting peak data-rates exceeding 10Gb/s and offering coverage of over 10km. The E-band low spectrum costs and high bandwidth availability also make it a popular choice for 5G backhaul [1]. Whereas the FCC/ETSI specifies the equivalent isotropic radiated power (EIRP) for E-band at 85dBm (55dBW), the current industry EIRP remains below 70dBm. With antenna gain reaching the upper threshold of 50dBi, a notable deficit in transmitted power exists to fully exploit the potential of the E-band. Despite efforts to enhance transmitted power by combining multiple amplifiers on a single chip [2,3], silicon technologies, known for high integration,

👥 作者与机构

Bharath Cimbili1,2,3, Mingquan Bao2, Christian Friesicke1, Rüdiger Quay1,3

Fraunhofer IAF, Freiburg, Germany