⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文提出了一种基于后段互连（BEoL）RC结构的温度传感器，在0.65V低电压下工作，面积仅900μm²，实现了从-25°C到125°C范围内±1°C的测温精度。通过利用BEoL电阻和电容的温度特性，解决了先进FinFET节点中低电压和有限无源器件类型带来的挑战，实现了小面积、高精度的片上温度监测。
capacity and prevent chip overheating, it is essential to minimize the gap between on-die thermal measurements and the actual temperature at hotspots. This relies primarily on the inherent accuracy of the temperature sensors and the distance to the heat sources. The latter factor is constrained by the physical footprint of the sensor, which is generally determined by the complexity of the sensor’s biasing and analog-to-digital conversion (ADC) schemes. In advanced FinFET nodes, the scaling of the supply voltage (VDD) and the decreasing of passive device types are other critical challenges for digital hot-spot sensors. Typical current-bias BJT sensors still need VDD≥1V [4-6]. A sub-1V capacitive-bias bulk-diode sensor has been reported in [9], but the extra keep-out zone between the bulk-diode and nearby PMOS logics may
Bei-Shing Lien*, Szu Lin Liu*, Wei-Lin Lai, Yi-Chen Lu, Yung-Chow Peng, Kenny Cheng-Hsiang Hsieh
TSMC, Hsinchu, Taiwan *Equally Credited Authors (ECAs) To maintain high-performance computing