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ISSCC 2025Session 26 · WIRELESS TRANSMITTERS AND FRONT-ENDSWireless65nm CMOS

A 17.7-to-29.5GHz Transceiver Front-End with 3.3dB NF and 20.2dBm OP1dB in 65nm CMOS

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📋 论文概要

本文提出了一款工作在17.7-29.5GHz的宽带毫米波收发前端,采用65nm CMOS工艺,实现了3.3dB的噪声系数和20.2dBm的输出1dB压缩点。该设计旨在解决5G毫米波、低轨卫星通信和通感一体化等应用中对宽带低噪声接收、高效率发射以及高收发隔离度的需求。

💡 主要创新点

核心指标
NF: 3.3dB, OP1dB: 20.2dBm, 频率范围: 17.7-29.5GHz
工艺节点
65nm CMOS
重要性
发表年份
ISSCC 2025

🏷 关键词

毫米波收发前端宽带低噪声高效率65nm CMOS

📄 原文摘要

Shanghai, China 4 Georgia Institute of Technology, Atlanta, GA 1 2 To support various emerging applications, such as 5G millimeter-wave (mm-wave) communications, low-earth-orbit (LEO) satellite communication (SATCOM), and jointed sensing and communication (JSAC), wideband mm-wave transceiver (TRX) front-ends are needed. However, three challenges exist, including wideband-low-noise receiving (RX), wideband high-efficiency transmitting (TX), and excellent isolation between TX and RX. Unfortunately, these three problems often intertwine with each other. Conventional TRXs employ switches in the signal path to isolate the RX and TX, which induces losses and linearity degradation. Moreover, the large parasitic capacitance of the power amplifier (PA) imposes significant equivalent capacitance at the input of the lownoise amplifie

👥 作者与机构

Botao Yang1, Nayu Li2, Yiwei Liu1, Hang Lu1, Huiyan Gao1, Shaogang Wang1,

Jingwen Xu1, Xuanyu He1, Na Yan3, Qun Jane Gu4, Chunyi Song2, Zhiwei Xu1 Zhejiang University, Zhoushan, China Donghai Laboratory, Zhoushan, China 3 Fudan University,

分类:Wireless · 年份:ISSCC 2025