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本文提出了一种适用于高边和低边600A、1200V SiC MOSFET的数字反馈有源栅极驱动器IC，解决了高边电压传感难题，通过寄生米勒电容校准电路实现精确感知，并利用数字反馈同时控制开通/关断的dVds/dt和抑制Vds浪涌，显著降低了开关损耗和电压应力。
Abstract A digital feedback active gate driver IC applicable to both high- and low-side 600A, 1200V SiC MOSFETs is proposed and demonstrated on the high-side. High-side voltage sensing uses a parasitic Miller capacitance calibration circuit, while digital feedback enables simultaneous turn-on/off dVds/dt control and Vds surge suppression. Measurements show 58% surge voltage and 66% switching loss reduction, with dVds/dt control within 10% error and an additional 29% loss reduction. Silicon Carbide (SiC) power devices are increasingly being adopted for traction inverters in motor drives of electric vehicles owing to their low-loss and high-speed switching characteristics. However, the drain voltage (Vds) and drain current (Ids) surges generated during high-speed switching act as noise sources, requiring large electromagnetic compatibility (EMC) filters in the inverter. The evolution of SiC power devices targets lower
Shusuke Kawai, Kohei Horii, Koutaro Miyazaki, Yuto Bushimata, Satoshi Takaya, Hiroaki Ishihara
Toshiba, Kawasaki, Japan