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本文提出一种混合双极输出隔离（HBO-I）栅极驱动电源，结合反激原边调节和开关电容接收端，从5V输入产生+15V/-5V双极输出，无需额外5V稳压器。该方案采用紧凑1:1耦合电感和5V CMOS器件，实现了1kV隔离、高CMTI和89.23%峰值效率，适用于SiC功率器件栅极驱动。
Abstract This paper presents a hybrid bipolar-output isolated (HBO-I) gate-driver power supply (GDPS) that combines a flyback-based TX with primary-side regulation (PSR) and a switched-capacitor-based RX. Even with a compact 1:1 coupled inductor and all 5V CMOS devices, the HBO-I GDPS delivers bipolar outputs of +15V/−5V from a 5V input without additional 5V regulators. Therefore, the HBO-I GDPS attains ) 1kV galvanic isolation barrier, robust high CMTI, and 89.23% peak efficiency at 3W. Silicon Carbide (SiC) power devices, which offer high power delivery capability, have emerged as key candidates to replace conventional silicon-based power devices. To ensure reliable operation of these devices, both a gate driver and the gate driver power supply (GDPS), each requiring a galvanic isolation barrier up to 1kV, are essential, as shown in Fig. 19.7.1 (bottom-left). Typically, a SiC gate driver requires +15V for turn-on. In addition,
Joo-Mi Cho, Jeong-Hun Kim, Yong-Chan Lee, Sung-Wan Hong
Sogang University, Seoul, Korea