A 28nm CMOS 1-Chip In-Pixel Memory Backplane Circuit with Pixel-Level Sensing and Compensation for 6652-PPI MicroLED AR Glasses

📋 论文概要

本文提出一款28nm CMOS工艺的6652-PPI微LED AR显示驱动芯片，通过像素级感测与pBIST校准电路实现对电流变化的精确补偿。集成了8位移位寄存器与MSB锁存器实现PWM，并采用自刷新、局部更新和注视点渲染等系统技术，将MIPI带宽降低59.2%，功耗降低40.1%。

💡 主要创新点

• 提出像素内存储器背板电路，集成pBIST实现像素级感测与补偿，有效校正电流失配。
• 采用8b移位寄存器与MSB锁存器实现PWM驱动，适用于2.7µm超小像素间距。
• 通过自刷新、局部更新和注视点渲染等系统级技术大幅降低带宽和功耗。

🏷 关键词

📄 原文摘要

6652-PPI microLED AR display. Pixel-level sensing with pBIST enables accurate calibration and compensation of current variation. The 2.7µm-pitch array integrates an 8b shifter with MSB latch for PWM. System techniques including self-refresh, partial update, and foveated rendering reduce MIPI bandwidth by 59.2% and power by up to 40.1%. Measured DNL <±0.25 LSB and flicker SNR $72 dB validate circuit and system effectiveness. Augmented reality (AR) glasses are emerging as a key wearable platform, requiring compact high-resolution displays integrated into the optical path without sacrificing comfort. For outdoor use, high luminance and a wide color gamut are essential, making micro lightemitting diodes (microLEDs) suitable due to their brightness, efficiency, and long lifetime [1,2]. Limited battery capacity makes low-power operation critical. Process variations cause

👥 作者与机构

Yongil Kwon, Sunkwon Kim, Youngkil Choi, Taehyun Kwon, Seongyoung Ryu, Sewhan Na, Kangjoo Kim, Uijong Song, Hyun-Wook Lim, Jongwoo Lee, Jae-Yeol Lee

Samsung Electronics, Suwon, Korea Abstract This work presents a 28nm CMOS 1-chip in-pixel memory backplane for a