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本文提出一种用于5G高压GaN功率放大器的符号功率跟踪电源调制器，采用两步子范围动态电压缩放(DVS)方案减少大电压步进所需电荷，并利用电感电流压摆率增强技术提高充电电流。该调制器在180nm BCD工艺下实现1.2μs的1至12V宽范围电压转换。
Abstract This paper presents a symbol power tracking supply modulator that delivers a high output voltage and a wide output range for 5G high-voltage GaN PAs. To accelerate voltage transitions, a two-step subranging DVS scheme reduces the charge required for large voltage steps, while an inductor current slew-rate enhancement technique boosts the charging current. Fabricated in a 180-nm BCD process, the proposed modulator achieves a 1.2μs transition across a wide 1-to-12V range. In 5G mobile devices, the power amplifier (PA) is a dominant source of power consumption, directly affecting battery life and thermal performance. To improve efficiency, average power tracking (APT) and envelope tracking (ET) have been widely used. However, extending the bandwidth of analog envelope tracking (AET) beyond 200MHz is technically challenging [1,2]. Therefore, digital envelope tracking (DET) [3-5] and symbol power tracking (SPT) [6]
Changjin Chen, Minghao Shang, Yichao Ji, Lin Cheng
University of Science and Technology of China, Hefei, China