⚡ 本页包含 AI 生成的分析内容，仅供参考
本文提出一种CMOS带隙基准电压源，采用电流域高阶温度补偿技术，利用电容偏置二极管型超PTAT电流源实现。该设计在两点修调后，在-40°C至125°C范围内温度系数为2.1-3.7ppm/°C，不精确度±0.06%（3σ），且具有简单的架构和高能效。
Abstract This paper presents a CMOS bandgap reference (BGR) with a current-domain high-order TC compensation by using a capacitively-biased-diode-based super-PTAT current bias. It achieves a TC of 2.1 to 7.1ppm/°C from -40 to 125°C after a batch trim, which is on par with state-of-the-art BGRs with a 1-point trim. After a 2-point trim, it achieves a TC that ranges from 2.1 to 3.7ppm/°C and an inaccuracy of ±0.06% (3σ) from -40 to 125°C. Its simple architecture also results in 2# higher energy efficiency. BJT-based bandgap references (BGRs) are essential building blocks for measurement and metering chips. Their 1st-order temperature coefficient (TC) can be minimized by adding a PTAT voltage (ΔVBE) to a CTAT voltage (VBE) in the correct proportions. However, due to the nonlinear term (∝T(ln(T)) in VBE, high-order TCs remain, which limit the accuracy of BGRs in standard CMOS processes [1-9]. To avoid this, a nonlinear compensation voltage
Zhong Tang1, Sining Pan2, Xiaopeng Yu3, Nick Nianxiong Tan4, Zhangming Zhu1
Xidian University, Xi’an, China, 2Tsinghua University, Beijing, China, 3Zhejiang University, Hangzhou, China, 4Vango Technologies, Hangzhou, China