ISSCC 2010

2010

210 篇论文 · RF & Wireless (33) · Memory (24) · mm-Wave (18) · Digital Circuits (18) · Digital Processors (16)

ISSCC 2010 Session 22 Image Sensors
A QVGA 143dB Dynamic Range Asynchronous Address-Event PWM Dynamic Image Sensor with Lossless Pixel-Level Video Compression
Christoph Posch, Daniel Matolin, Rainer Wohlgenannt
Conventional image/video sensors acquire visual information from a scene in time-quantized fashion at some predetermined frame rate. Each frame carries the information from all pixels, regardless of whether or not this i
Austrian Institute of Technology, Vienna, Austria
ISSCC 2010 Session 22 Image Sensors
A CMOS Image Sensor for 10Mb/s 70m-Range LEDBased Spatial Optical Communication
Shinya Itoh1, Isamu Takai2, Md. Shakowat Zaman Sarker1,
recently been of interest in the mobile localarea communication systems, especially in the automotive applications. It has many advantages over the radio communication such as robustness to jamming, human safety due to l
Moeta Hamai1, Keita Yasutomi1, Michinori Andoh2, Shoji Kawahito1 1 Shi
ISSCC 2010 Session 22 Image Sensors
A 256×256 14k Range Maps/s 3-D Range-Finding Image Sensor Using Row-Parallel Embedded Binary Search Tree and Address Encoder
Shingo Mandai, Makoto Ikeda, Kunihiro Asada
These days, 3-D information technology is being developed rapidly and has been applied to various fields. Moreover, ultra-fast 3-D range-finding makes way for the possibilities of additional applications such as drop tes
University of Tokyo, Tokyo, Japan
ISSCC 2010 Session 22 Image Sensors
An 80×60 Range Image Sensor Based on 10µm 50MHz Lock-In Pixels in 0.18µm CMOS
David Stoppa, Nicola Massari, Lucio Pancheri, Mattia Malfatti,
provided by standard digital cameras is often not sufficient to build the sophisticated models required by systems capable of analyzing and interpreting their environment. A three-dimensional (3D) image sensor has great
Matteo Perenzoni, Lorenzo Gonzo Fondazione Bruno Kessler - IRST, Trent
ISSCC 2010 Session 22 Image Sensors
A 2.2/3-inch 4K2K CMOS Image Sensor Based on Dual Resolution And Exposure Technique
Takeo Azuma1, Taro Imagawa1, Sanzo Ugawa1, Yusuke Okada1,
from HD to 4K2K, which will further extend to 8K4K / portable 4K2K. With advancements in device fabrication process technologies, there has been a pressing need for the miniaturization as well as high resolution and high
Hiroyoshi Komobuchi1, Motonori Ishii2, Shigetaka Kasuga2, Yoshihisa Ka
ISSCC 2010 Session 22 Image Sensors
A 1/2.3-inch 10.3Mpixel 50frame/s Back-Illuminated CMOS Image Sensor
Hayato Wakabayashi1, Keiji Yamaguchi1, Masafumi Okano1,
Souichiro Kuramochi1, Oichi Kumagai1, Seijiro Sakane1, Masamichi Ito1, Masahiro Hatano1, Masaru Kikuchi1, Yuuki Yamagata1, Takeshi Shikanai1, Ken Koseki1, Keiji Mabuchi1, Yasushi Maruyama1, Kentaro Akiyama1, Eiji Miyata2
ISSCC 2010 Session 23 mm-Wave
A Millimeter-Wave Intra-Connect Solution
Kenichi Kawasaki1, Yoshiyuki Akiyama1, Kenji Komori1, Masahiro Uno1,
Hidenori Takeuchi1, Tomoari Itagaki1, Yasufumi Hino1, Yoshinobu Kawasaki1, Katsuhisa Ito1, Ali Hajimiri2 Sony, Tokyo, Japan, California Institute of Technology, Pasadena, CA Figure 23.1.4 shows the measured injection loc
ISSCC 2010 Session 23 mm-Wave
A SiGe Quadrature Transmitter and Receiver Chipset for Emerging High-Frequency Applications at 160GHz
Ullrich R Pfeiffer, Erik Öjefors, Yan Zhao
A chipset for emerging high-frequency applications at 158 to 165GHz is presented. The two chips (RX and TX) are implemented in a European (DotFive) SiGe BiCMOS technology with fT=260GHz and fMAX=380GHz [1]. Envisioned ap
University of Wuppertal, Wuppertal, Germany
ISSCC 2010 Session 23 mm-Wave
A W-Band 65nm CMOS Transmitter Front-End with 8GHz IF Bandwidth and 20dB IR-Ratio
Dan Sandström, Mikko Varonen, Mikko Kärkkäinen, Kari A. I. Halonen
The nanoscale era of CMOS technology has enabled the integration of mm-Wave circuits and front-ends at W-band [1,2]. The possible applications range from telecommunications (71 to 76 & 81 to 86GHz) and collision avoidanc
Helsinki University of Technology, Espoo, Finland
ISSCC 2010 Session 23 mm-Wave
A 90GHz-Carrier 30GHz-Bandwidth Hybrid Switching Transmitter with Integrated Antenna
Amin Arbabian1, Bagher Afshar1, Jun-Chau Chien1, Shinwon Kang1,
STMicroelectronics, Crolles, France 2 There is considerable interest in wideband pulse modulation at mm-Wave frequencies for application in radar and medical imaging systems [1,2]. Accuracy and resolution in these respec
Steven Callender1, Ehsan Adabi1, Stefano Dal Toso2, Romain Pilard3, Da
ISSCC 2010 Session 23 mm-Wave
A 13.1% Tuning Range 115GHz Frequency Generator Based on an Injection-Locked Frequency Doubler in 65nm CMOS
Andrea Mazzanti1, Enrico Monaco1,2, Massimo Pozzoni3,
University of Modena and Reggio Emilia, Modena, Italy Istituto Universitario di Studi Superiori, Pavia, Italy 3 STMicroelectronics, Pavia, Italy 4 University of Pavia, Pavia, Italy 2 Ultra-scaled CMOS devices offer the p
Francesco Svelto4
ISSCC 2010 Session 23 mm-Wave
A 1V 17.9dBm 60GHz Power Amplifier in Standard 65nm CMOS
Jie-Wei Lai1, Alberto Valdes-Garcia2, 1
J. Watson, Yorktown Heights, NY 2 For point-to-point multi-Gb/s applications in mobile devices with single antennas, low-cost, highly integrated solutions are preferred, and CMOS technology is a candidate for mm-Wave SoC
MediaTek, Hsinchu, Taiwan IBM T
ISSCC 2010 Session 23 mm-Wave
A High-Gain 60GHz Power Amplifier with 20dBm Output Power in 90nm CMOS
Chi Y Law, Anh-Vu Pham
input matching network of the second stage is matched with 50Ω to minimize loss while the output matching network is designed to deliver maximum output power using power contours which were determined by load-pull simula
University of California, Davis, CA
ISSCC 2010 Session 23 mm-Wave
A 53-to-68GHz 18dBm Power Amplifier with an 8-Way Combiner in Standard 65nm CMOS
Baudouin Martineau1, Vincent Knopik2, Alexandre Siligaris3,
been demonstrated to satisfy the market demand for high data rates and frequency bandwidths [1-6]. However, 60GHz products need an improvement in power performance as well as transistor reliability for large signal opera
Frederic Gianesello1, Didier Belot1 1 STMicroelectronics, Crolles, Fra
ISSCC 2010 Session 23 mm-Wave
A 650GHz SiGe Receiver Front-End for Terahertz Imaging Arrays
Erik Öjefors, Ullrich R Pfeiffer
Terahertz (300GHz-to-3THz) imaging systems and radars are capable of providing high resolution images while still penetrating many materials [1]. Imaging receivers based on III-V Schottky diodes and waveguide technology
University of Wuppertal, Wuppertal, Germany
ISSCC 2010 Session 24 Memory
A 7Gb/s/pin GDDR5 SDRAM with 2.5ns Bank-to-Bank Active Time and No Bank-Group Restriction
Tae-Young Oh, Young-Soo Sohn, Seung-Jun Bae, Min-Sang Park,
Ji-Hoon Lim, Yong-Ki Cho, Dae-Hyun Kim, Dong-Min Kim, Hye-Ran Kim, Hyun-Joong Kim, Jin-Hyun Kim, Jin-Kook Kim, Young-Sik Kim, Byeong-Cheol Kim, Sang-Hyup Kwak, Jae-Hyung Lee, Jae-Young Lee, Chang-Ho Shin, Yun-Seok Yang,
ISSCC 2010 Session 24 Memory
Paper withdrawn by author • 2010 IEEE International Solid-State Circuits Conference 978-1-4244-6034-2/10/$26.00 ©2010 IEEE
ISSCC 2010 Session 24 Memory
An 8Tb/s 1pJ/b 0.8mm2/Tb/s QDR Inductive-Coupling Interface Between 65nm CMOS GPU and 0.1µm DRAM
Noriyuki Miura, Kazutaka Kasuga, Mitsuko Saito, Tadahiro Kuroda
This paper presents an 8Tb/s 1pJ/b 0.8mm2/Tb/s quad data rate (QDR) inductive-coupling interface between 65nm CMOS GPU and 0.1µm DRAM. The interface consists of 1024-bit parallel inductive-coupling transceivers operating
Keio University, Yokohama, Japan
ISSCC 2010 Session 24 Memory
A Bitline Sense Amplifier for Offset Compensation
Myoung Jin Lee, Ki Myung Kyung, Hyung Sik Won, Myoung Su Lee, Kun Woo Park
DRAM chips [1]. To satisfy this need, it is desirable to use a low VCORE in the DRAM core, even though with such a low voltage it is difficult to sense the cell signal due to an insufficient sensing margin in high densit
Hynix Semiconductor, Icheon, Korea The industry has continuously deman
ISSCC 2010 Session 24 Memory
A 2Gb/s 1.8pJ/b/chip Inductive-Coupling ThroughChip Bus for 128-Die NAND-Flash Memory Stacking
Mitsuko Saito, Noriyuki Miura, Tadahiro Kuroda
NAND Flash memory chips and 1 controller chip are stacked in a single package for SSD applications (Fig. 24.5.1). The controller chip accesses a random memory chip by relayed transmission using inductive-coupling transce
Keio University, Yokohama, Japan
ISSCC 2010 Session 24 Memory
A 159mm2 32nm 32Gb MLC NAND-Flash Memory with 200MB/s Asynchronous DDR Interface
Hyunggon Kim, Jung-hoon Park, Ki-Tae Park, Pansuk Kwak, Ohsuk
Kwon, Chulbum Kim, Younyeol Lee, Sangsoo Park, Kyungmin Kim, Doohyun Cho, Juseok Lee, Jungho Song, Soowoong Lee, Hyukjun Yoo, Sanglok Kim, Seungwoo Yu, Sungjun Kim, Sungsoo Lee, Kyehyun Kyung, Yong-Ho Lim, Chilhee Chung
ISSCC 2010 Session 24 Memory
A 3bit/Cell 32Gb NAND Flash Memory at 34nm with 6MB/s Program Throughput and with Dynamic 2b/Cell Blocks Configuration Mode for a Program Throughput Increase up to 13MB/s
G.G. Marotta1, A. Macerola1, A. D’Alessandro1, A. Torsi1, C. Cerafogli1,
C. Lattaro1, C. Musilli1, D. Rivers2, E. Sirizotti1, F. Paolini1, G. Imondi1, G. Naso1, G. Santin1, L. Botticchio1, L. De Santis1, L. Pilolli1, M.L. Gallese1, M. Incarnati1, M. Tiburzi1, P. Conenna1, S. Perugini1, V. Mos
ISSCC 2010 Session 24 Memory
A 32Gb MLC NAND-Flash Memory with Vth-EnduranceEnhancing Schemes in 32nm CMOS
Changhyuk Lee, Sok-Kyu Lee, Sunghoon Ahn, Jinhaeng Lee, Wonsun
Park, Yongdeok Cho, Chaekyu Jang, Chulwoo Yang, Sanghwa Chung, InSuk Yun, Byoungin Joo, Byoungkwan Jeong, Jeeyul Kim, Jaekwan Kwon, Hyunjong Jin, Yujong Noh, Jooyun Ha, Moonsoo Sung, Daeil Choi, Sanghwan Kim, Jeawon Choi
ISSCC 2010 Session 25 Wireless
A Maximally-Digital Radio Receiver Front-End Frank Opteynde
Audax Technologies, Leuven, Belgium, Previous work [1,2] has demonstrated the feasibility of a drastic reduction of the
analog circuits content in radio transmitters and synthesizers, in favour of more digital circuits. But for radio receivers, a major amount of analog circuitry is still required [1,3]. This paper demonstrates the feasibi
ISSCC 2010 Session 25 Wireless
A 65nm CMOS 2.4GHz 31.5dBm Power Amplifier with a Distributed LC Power-Combining Network and Improved Linearization for WLAN Applications
Ali Afsahi1,2, Arya Behzad2, Lawrence E. Larson1, 1
greatest challenges facing the designers of complex wireless SoCs. Recently, there has been a significant effort to implement PA’s in CMOS [1-4]. The 802.11g standard utilizes OFDM modulation, which has a very high peak-
University of California, San Diego, CA Broadcom, San Diego, CA 2 The
ISSCC 2010 Session 25 Wireless
A Fully Integrated 2×1 Dual-Band Direct-Conversion Transceiver with Dual-Mode Fractional Divider and Noise-Shaping TIA for Mobile WiMAX SoC in 65nm CMOS nent, 1/3 fC, is actually generated by the mismatch at the output, its power level is low enough to be filtered out by the subsequent circuits, as is the case for the “fractional-then-distribute” architecture with LC-BPFs. This issue is less critical in RX.
Jun Deguchi, Daisuke Miyashita, Yosuke Ogasawara, Gaku Takemura,
Masaomi Iwanaga, Kenichi Sami, Rui Ito, Junji Wadatsumi, Yuki Tsuda, Shoko Oda, Shunji Kawaguchi, Nobuyuki Itoh, Mototsugu Hamada Figure 25.4.4 shows the measured spurs at the TX output. Other than 1/3 fC, 2/3, 4/3, and
ISSCC 2010 Session 25 Wireless
A 5mm2 40nm LP CMOS 0.1-to-3GHz Multistandard Transceiver
Mark Ingels1, Vito Giannini1, Jonathan Borremans1, Gunjan Mandal1,
Bjorn Debaillie1, Peter Van Wesemael1, Tomohiro Sano2, Takaya Yamamoto3, Dries Hauspie4, Joris Van Driessche1, Jan Craninckx1 quency was therefore limited to 3GHz. The differential mixer’s gain can be lowered over 12dB i
ISSCC 2010 Session 25 Wireless
A Multistandard Multiband Mobile TV RF SoC in 65nm CMOS
Jae-Hong Chang, Huijung Kim, Jeong-Hyun Choi, Hangun Chung,
Jungwook Heo, Sanghoon Kang, Jong-Dae Bae, Heetae Oh, Youngwoon Kim, Taek-Won Kwon, Ryan Kim, Wooseung Choo, Dojun Rhee, Byeong-ha Park Samsung Electronics, Yongin, Korea The mobile TV applications such as DVH-H/T, T-DMB
ISSCC 2010 Session 25 Wireless
A 1V RF SoC with an 863-to-928MHz 400kb/s Radio and a 32b Dual-MAC DSP Core for Wireless Sensor and Body Networks
Erwan Le Roux, Nicola Scolari, Budhaditya Banerjee, Claude Arm,
Patrick Volet, Daniel Sigg, Pascal Heim, Jean-Félix Perotto, François Kaess, Nicolas Raemy, Alexandre Vouilloz, David Ruffieux, Matteo Contaldo, Frédéric Giroud, Daniel Séverac, Marc Morgan, Stève Gyger, Cédric Monneron,
ISSCC 2010 Session 26 Digital Circuits
A 3.5GHz Wideband ADPLL with Fractional Spur Suppression Through TDC Dithering and Feedforward Compensation
Colin Weltin-Wu1,2, Enrico Temporiti3, Daniele Baldi3, Marco Cusmai2,
Columbia University, New York, NY University of Pavia, Pavia, Italy 3 STMicroelectronics, Pavia, Italy 2 The digital-intensive approach to frequency synthesis embodied by the ADPLL
Francesco Svelto2
ISSCC 2010 Session 26 Digital Circuits
A 2.1-to-2.8GHz All-Digital Frequency Synthesizer with a Time-Windowed TDC
Takashi Tokairin1, Mitsuji Okada2, Masaki Kitsunezuka1, Tadashi Maeda1, Muneo Fukaishi1
NEC, Kawasaki, Japan NEC Electronics, Kawasaki, Japan 2 All-digital phase-locked loops (ADPLLs) offer the advantages of eliminating the large on-chip passive filter and not suffering from poor low-supply-voltage operatio
ISSCC 2010 Session 26 Digital Circuits
A Calibration-Free 800MHz Fractional-N Digital PLL with Embedded TDC
Mike Shuo-Wei Chen, David Su, Srenik Mehta
Atheros Communications, Santa Clara, CA Digital Phase-Locked Loops (DPLLs), which are amenable to CMOS process scaling, have recently been demonstrated for both wireless and wireline applications as alternatives to conve
ISSCC 2010 Session 26 Digital Circuits
Spur-Reduction Techniques for PLLs Using SubSampling Phase Detection
Xiang Gao1, Eric A. M. Klumperink1, Gerard Socci2, Mounir Bohsali2, Bram Nauta1
University of Twente, Enschede, Netherlands National Semiconductor, Santa Clara, CA 2 In PLL designs, a wide loop bandwidth is often desired as it offers fast settling time, reduces on-chip loop filter area and sensitivi
ISSCC 2010 Session 26 Digital Circuits
A 3MHz-BW 3.6GHz Digital Fractional-N PLL with
Sub-Gate-Delay TDC, Phase-Interpolation Divider, and Digital Mismatch Cancellation
spurs [1], [2]. However, the actual results depend dramatically on the linearity of the time-to-digital converter (TDC). This paper presents a 3MHz bandwidth fractional-N synthesizer, which combines a 4ps TDC with digita
Marco Zanuso, Salvatore Levantino, Carlo Samori, Andrea Lacaita Polite
ISSCC 2010 Session 26 Digital Circuits
A 1.4psrms-Period-Jitter TDC-Less Fractional-N Digital PLL with Digitally Controlled Ring Oscillator in 65nm CMOS
Werner Grollitsch, Roberto Nonis, Nicola Da Dalt
State of the art digital PLLs can be divided in two categories, depending on the implementation of the digital phase detector. Digital clocking and wireline applications mostly use a Bang-Bang detector (BBPLLs) [1-3], of
Infineon Technologies, Villach, Austria
ISSCC 2010 Session 26 Digital Circuits
A 86MHz-to-12GHz Digital-Intensive PhaseModulated Fractional-N PLL Using a 15pJ/Shot 5ps TDC in 40nm digital CMOS
Jonathan Borremans1, Kameswaran Vengattaramane1,2, Vito Giannini1, Jan Craninckx1
IMEC, Leuven, Belgium K.U. Leuven, Leuven, Belgium 2 Digital-intensive PLL architectures emerge [1]-[4], exploiting the benefits of CMOS scaling. This work presents a digital-intensive, reconfigurable 86MHz12GHz synthesi
ISSCC 2010 Session 26 Digital Circuits
A 1GHz ADPLL with a 1.25ps Minimum-Resolution Sub-Exponent TDC in 0.18µm CMOS
Seon-Kyoo Lee, Young-Hun Seo, Yunjae Suh, Hong-June Park, Jae-Yoon Sim
since the minimum resolvable time quantity is proportional to one-inverter delay [1]. For fine time resolution, vernier delay chains are frequently used [2,3]. Since the time resolution is determined by the difference be
Pohang University of Science and Technology, Pohang, Korea The resolut
ISSCC 2010 Session 27 RF & Wireless
A Batteryless Thermoelectric Energy-Harvesting Interface Circuit with 35mV Startup Voltage
Yogesh K. Ramadass, Anantha P. Chandrakasan
Energy harvesting is an emerging technology with applications to handheld, portable and implantable electronics. Harvesting ambient heat energy using thermoelectric generators (TEG’s) [1] is a convenient means to supply
Massachusetts Institute of Technology, Cambridge, MA
ISSCC 2010 Session 27 RF & Wireless
Nano-Watt Power Management and Vibration Sensing on a Dust-Size Batteryless Sensor Node for Ambient Intelligence Applications
Toshishige Shimamura, Mamoru Ugajin, Kenji Suzuki, Kazuyoshi Ono,
preventing the realization of dust-size battery-less sensor nodes are reported. Sensor networks deploying large numbers of nodes are anticipated for “ambient intelligence” [1]. For such networks, the sensor nodes should
Norio Sato, Kei Kuwabara, Hiroki Morimura, Shin’ichiro Mutoh NTT, Kana
ISSCC 2010 Session 27 RF & Wireless
Palm NMR and One-Chip NMR 1 2 2 1
Nan Sun , Tae-Jong Yoon , Hakho Lee , William Andress ,
Cambridge, MA, T2 Biosystems, Cambridge, MA 2 3 Nuclear magnetic resonance, or NMR, is the energy exchange between an RF magnetic field and an atomic nucleus such as a hydrogen proton, which is a tiny bar magnet due to i
Vasiliki Demas3, Pablo Prado3, Ralph Weissleder2, Donhee Ham1 1 Harvar
ISSCC 2010 Session 27 RF & Wireless
A 3.9mW 25-Electrode Reconfigured Thoracic Impedance/ECG SoC with Body-Channel Transponder
Long Yan, Joonsung Bae, Seulki Lee, Binhee Kim, Taehwan Roh,
cardiovascular-related disease [1] with wearable body sensor network (WBSN) [2-3]. The WBSN introduced in [3] monitored ECG at maximum 48 points, and transferred data using arrayed inductive link for cm-range wireless in
Kiseok Song, Hoi-Jun Yoo KAIST, Daejeon, Korea Recently, wearable hear
ISSCC 2010 Session 27 RF & Wireless
A Multichannel DNA SoC for Rapid Point-of-Care Gene Detection
David M Garner, Hua Bai, Pantelis Georgiou, Tim G Constandinou,
Samuel Reed, Leila M Shepherd, Winston Wong Jr, K.T. Lim, Christofer Toumazou DNA Electronics, London, United Kingdom Point-of-care diagnostics for detection of genetic sequences require biosensing platforms that are sen
ISSCC 2010 Session 27 RF & Wireless
A Single-Inductor AC-DC Piezoelectric EnergyHarvester/Battery-Charger IC Converting ±(0.35 to 1.2V) to (2.7 to 4.5V)
Dongwon Kwon, Gabriel Alfonso Rincon-Mora
Microscale integration constrains energy and the lifetime microsystems like wireless sensors and biomedical implants can achieve to impractical levels. Harnessing ambient vibration energy from a small piezoelectric trans
Georgia Institute of Technology, Atlanta, GA
ISSCC 2010 Session 27 RF & Wireless
A 110µW 10Mb/s eTextiles Transceiver for Body Area Networks with Remote Battery Power
Patrick P. Mercier, Anantha P. Chandrakasan
Emerging sensor technologies are enabling low-cost ambulatory medical devices for remote patient monitoring. In order to replace traditional bulky wired links used to communicate data around and away from the body, recen
Massachusetts Institute of Technology, Cambridge, MA
ISSCC 2010 Session 27 RF & Wireless
A 5.4dBm 42mW 2.4GHz CMOS BAW-Based QuasiDirect Conversion Transmitter
Matteo Contaldo, David Ruffieux, Christian Enz
The trend of low-data rate wireless sensor networks (WSN) to interface at higher data rate with other devices or networks using standard protocols such as Bluetooth Low Energy and ZigBee, calls for a flexible RF system a
CSEM, Neuchâtel, Switzerland
ISSCC 2010 Session 27 RF & Wireless
An 8.6GHz 42ps Pulse-Width Electrical Mode-Locked Oscillator
Michael W Chen, David S Ricketts
This paper reports on a fully integrated electrical mode-locked oscillator. Modelocked oscillators are traveling wave oscillators that excite multiple spectral modes of a transmission line resonator and lock them in phas
Carnegie Mellon University, Pittsburgh, PA
ISSCC 2010 Session 27 RF & Wireless
Ultra-Low-Voltage Circuits for Sensor Applications Powered by Free-Space Optics
Travis Kleeburg1, Jeffrey Loo2, Nathaniel J Guilar3, Erin Fong1, Rajeevan Amirtharajah1
University of California, Davis, CA Cisco Systems, Davis, CA 3 Agilent Technology, Santa Clara, CA 2 Advances in photonics have typically been exploited in high performance systems, e.g. high-frequency, low-jitter clocks
ISSCC 2010 Session 3 RF & Wireless
A Quad-Band Class-39 RF CMOS Receiver for Evolved EDGE
Thomas Dellsperger1, David Tschopp1, Jürgen Rogin1, Yangjian Chen2,
polarize between high-end smart phones and ultra-low-cost devices, with the former providing the only growth sector during the downturn recently. A key enabler for the popular smart phones, netbooks and other mobile broa
Thomas Burger2, Qiuting Huang1,2 1 Advanced Circuit Pursuit, Zollikon,
ISSCC 2010 Session 3 RF & Wireless
A 0.8mm2 All-Digital SAW-Less Polar Transmitter in 65nm EDGE SoC
Jaimin Mehta1, R. B. Staszewski1,2, Oren Eliezer1, Sameh Rezeq1,
Khurram Waheed1, Mitch Entezari1, Gennady Feygin1, Sudheer Vemulapalli1, Vasile Zoicas1, Chih-Ming Hung1, Nathen Barton1, Imran Bashir1, Kenneth Maggio1, Michel Frechette1, Meng-Chang Lee1, John Wallberg1, Patrick Cruise
ISSCC 2010 Session 3 RF & Wireless
A Tri-Band SAW-Less WCDMA/HSPA RF CMOS Transceiver with On-Chip DC-DC Converter Connectable to Battery
Qiuting Huang1,2, Jürgen Rogin1, Xinhua Chen1,3, David Tschopp1,
Thomas Burger2, Thomas Christen1, Dimitris Papadopoulos1,4, Ilian Kouchev1, Chiara Martelli1,2, Thomas Dellsperger1 1 Advanced Circuit Pursuit, Zollikon, Switzerland ETH Zürich, Zürich, Switzerland, 3 now with Marvell Se