ISSCC 2013

2013

210 篇论文 · Wireless (34) · Memory (26) · Digital Circuits (17) · Medical & Bio (17) · Wireline I/O (17)

ISSCC 2013 Session 27 Image Sensors
A 0.18μm CMOS SoC for a 100m-Range 10fps 200×96-Pixel Time-of-Flight Depth Sensor
Cristiano Niclass, Mineki Soga, Hiroyuki Matsubara, Masaru Ogawa, Manabu Kagami
at consumer electronics applications have recently appeared in CMOS. Diffusedlight sensors taking advantage of SPAD pixels [1,3], conventional [2] and pinned-photodiode lock-in [4,5] pixels demonstrate centimeter-ranging
Toyota Central R&D Labs, Nagakute, Japan A number of potentially low-c
ISSCC 2013 Session 27 Image Sensors
3D Camera Based on Linear-Mode Gain-Modulated Avalanche Photodiodes
Olga Shcherbakova1,2, Lucio Pancheri1, Gian-Franco Dalla Betta1,
scientific and industrial communities have shown an increasing interest in range imaging, due to its potential exploitation in various application domains such as robotics, security and surveillance, vehicle safety, gami
Nicola Massari2, David Stoppa2 University of Trento, Trento, Italy, 2F
ISSCC 2013 Session 27 Image Sensors
A 3D Vision 2.1Mpixel Image Sensor for Single-Lens Camera Systems
Shinzo Koyama, Kazutoshi Onozawa, Keisuke Tanaka, Yoshihisa Kato
We present a CMOS image sensor that enables a compact 3-dimensional (3D) vision camera system comprising a single set of the sensor and a camera lens. In order to make binocular parallax, which is essential for 3D imagin
Panasonic, Nagaokakyo, Japan
ISSCC 2013 Session 27 Image Sensors
A 187.5μVrms-Read-Noise 51mW 1.4Mpixel CMOS Image Sensor with PMOSCAP Column CDS and 10b Self-Differential Offset-Cancelled Pipeline SAR-ADC
Jun Deguchi1, Fumihiko Tachibana1, Makoto Morimoto1,
Masayoshi Chiba1, Takeshi Miyaba2, Hideki Tanaka1, Kyoichi Takenaka2, Satoshi Funayama1, Kunihiko Amano1, Kazuhide Sugiura1, Ryuta Okamoto1, Shouhei Kousai1 Toshiba, Kawasaki, Japan, 2Toshiba Microelectronics, Kawasaki,
ISSCC 2013 Session 3 Digital Processors
GHz System z Microprocessor and Multichip Module
James Warnock1, Yuen H Chan2, Hubert Harrer3, David Rude2,
Ruchir Puri4, Sean Carey2, Gerard Salem5, Guenter Mayer3, Yiu-Hing Chan2, Mark Mayo2, Adam Jatkowski2, Gerald Strevig6, Leon Sigal4, Ayan Datta7, Anne Gattiker8, Aditya Bansal4, Douglas Malone2, Thomas Strach3, Huajun We
ISSCC 2013 Session 3 Digital Processors
A 3.6GHz 16-Core SPARC SoC Processor in 28nm
Jason Hart, Steve Butler, Hoyeol Cho, Yuefei Ge, Gregory Gruber,
Dawei Huang, Changku Hwang, Daisy Jian, Tim Johnson, Georgios Konstadinidis, Lance Kwong, Robert Masleid, Umesh Nawathe, Aparna Ramachandran, Yongning Sheng, Jinuk Luke Shin, Sebastian Turullois, Zuxu Qin, King Yen Oracl
ISSCC 2013 Session 3 Digital Processors
A 3.40ms/GF(p521) and 2.77ms/GF(2521) DF-ECC Processor with Side-Channel Attack Resistance
Jen-Wei Lee, Szu-Chi Chung, Hsie-Chia Chang, Chen-Yi Lee
Public-key cryptosystems (Fig. 3.3.1) have been widely developed for ensuring the security of information exchange in network communications, financial markets, private data storage, and personal identification devices.
National Chiao Tung University, Hsinchu, Taiwan
ISSCC 2013 Session 3 Digital Processors
Jaguar: A Next-Generation Low-Power x86-64 Core
Teja Singh, Joshua Bell, Shane Southard, also includes an adjustable write-chop circuit which allows for silicon write-m
in the standard place and route section. This allows for late changes to the RAMs without affecting the entire core and allows for easier process portability. AMD, Austin, TX “Jaguar” (JG) is the codename for AMD’s follo
ISSCC 2013 Session 3 Digital Processors
Godson-3B1500: A 32nm 1.35GHz 40W 172.8GFLOPS 8-Core Processor
Weiwu Hu1,2, Yifu Zhang1,2, Liang Yang2, Baoxia Fan2, Yunji Chen1,2,
Shiqiang Zhong2, Huandong Wang2, Zichu Qi1,2, Pengyu Wang1,2, Xiang Gao2, Xu Yang2, Bin Xiao1,2, Hongsheng Wang2, Zongren Yang1,2, Liqiong Yang1,2, Shuai Chen1,2 Chinese Academy of Sciences, Beijing, China, 2 Loongson Te
ISSCC 2013 Session 3 Digital Processors
A 65nm 39GOPS/W 24-Core Processor with 11Tb/s/W Packet-Controlled Circuit-Switched Double-Layer Network-on-Chip and Heterogeneous Execution Array
Peng Ou, Jiajie Zhang, Heng Quan, Yi Li, Maofei He, Zheng Yu,
programmable multicore processors are drawing attention due to their high flexibility and low implementation cost, yet their performance and energy efficiency still cannot fulfill the demands of many compute-intensive ap
Xueqiu Yu, Shile Cui, Jie Feng, Shikai Zhu, Jie Lin, Ming’e Jing, Xiao
ISSCC 2013 Session 3 Digital Processors
Bandwidth and Power Management of Glueless 8-Socket SPARC T5 System
Venkatram Krishnaswamy1, Dawei Huang2, Sebastian Turullols1, Jinuk Luke Shin1
Oracle, Santa Clara, CA, 2 Oracle, San Diego, CA 1 Continuous advancement in multicore and multi-threaded design requires optimized integration of hardware and software to address increasing bandwidth and power managemen
ISSCC 2013 Session 3 Digital Processors
A 10th Generation 16-Core SPARC64 Processor for Mission-Critical UNIX Server
Ryuji Kan1, Tomohiro Tanaka1, Go Sugizaki1, Ryuichi Nishiyama1,
Sota Sakabayashi1, Yoichi Koyanagi2, Ryuji Iwatsuki1, Kazumi Hayasaka1, Taiki Uemura3, Gaku Ito1, Yoshitomo Ozeki1, Hiroyuki Adachi1, Kazuhiro Furuya1, Tsuyoshi Motokurumada1 Fujitsu, Kawasaki, Japan, 2Fujitsu Laboratori
ISSCC 2013 Session 4 Wireless
A Resonant Regulating Rectifier (3R) Operating at 6.78 MHz for a 6W Wireless Charger with 86% Efficiency
KAIST, Daejeon, Korea, 2Samsung Electronics, Suwon, Korea
The magnitudes of IRS and VXH follow simple dynamics under a resonant condition. When VXH is low, the resonant current IRS is built up slowly, whereas when VXH is high, the current is decreased or diminished to zero. If
ISSCC 2013 Session 4 Wireless
A 13.56MHz Fully Integrated 1X/2X Active Rectifier with Compensated Bias Current for Inductively Powered Devices
Yan Lu, Xing Li, Wing-Hung Ki, Chi-Ying Tsui, C. Patrick Yue
Wireless power transfer has a broad range of applications ranging from mobile phone chargers to biomedical implants. For cochlear implants [1] and retinal prostheses [2], having a miniaturized form factor and being batte
HKUST, Hong Kong, China
ISSCC 2013 Session 4 Wireless
A 400nW Single-Inductor Dual-Input-Tri-Output DC-DC Buck-Boost Converter with Maximum Power Point Tracking for Indoor Photovoltaic Energy Harvesting
Kin Wai Roy Chew, Zhuochao Sun, Howard Tang, Liter Siek
Energy harvesting enables the remote sensors of the wireless sensor network to obtain power from the environment for their entire lifetime. For indoor remote sensors, amorphous silicon photovoltaic (PV) cell can be used
Nanyang Technological University, Singapore, Singapore
ISSCC 2013 Session 4 Wireless
An Adaptive Load-Line Tuning IC for Photovoltaic Module Integrated Mobile Device with 470µs
Transient Time, Over 99% Steady-State Accuracy, and 94% Power Conversion Efficiency
battery. To extend battery usage time before recharge, harvesting energy from ambient light provides an elegant solution if the photovoltaic (PV) modules can be integrated with mobile devices [1]. However, mobile devices
Wen-Chuen Liu, Yi-Hsiang Wang, Tai-Haur Kuo National Cheng Kung Univer
ISSCC 2013 Session 4 Wireless
A 3.4mW Photovoltaic Energy-Harvesting Charger with Integrated Maximum Power Point Tracking and Battery Management
Tsung-Heng Tsai, Kai Chen
Energy harvesting is an attractive technique to take advantage of renewable energy and make systems, such as wireless sensor nodes, less dependent on external power sources. A photovoltaic (PV) energy-harvesting charger
National Chung Cheng University, Chia-Yi, Taiwan
ISSCC 2013 Session 4 Wireless
A Self-Biased 5-to-60V Input Voltage and 25-to1600µW Integrated DC-DC Buck Converter with Fully Analog MPPT Algorithm Reaching up to 88% End-to-End Efficiency
Stefano Stanzione1, Chris van Liempd1, Rob van Schaijk1,
Energy harvesting is seen as an enabling technology for autonomous wireless sensing in automotive applications. This technology may rely on piezoelectric or electrostatic energy conversion using the energy available duri
Yasuyuki Naito2, Refet Firat Yazicioglu3, Chris van Hoof1,4 imec - Hol
ISSCC 2013 Session 4 Wireless
A 1µW-to-1mW Energy-Aware Interface IC for Piezoelectric Harvesting with 40nA Quiescent Current and Zero-Bias Active Rectifiers
Chris van Liempd1, Stefano Stanzione1, Younis Allasasmeh1,
systems drives an intensive use of ultra-low power circuit techniques. Smart sensor systems composed of an energy harvester, sensors, an energy storage system and wireless transceivers require an efficient interface circ
Chris van Hoof2,3 imec - Holst Centre, Eindhoven, The Netherlands, ime
ISSCC 2013 Session 4 Wireless
A Single-Inductor 0.35µm CMOS Energy-Investing Piezoelectric Harvester
Dongwon Kwon, Gabriel Alfonso Rincon-Mora
Because miniaturized systems store little energy, their lifespans are often short. Fortunately, vibrations are consistent and abundant in many applications, so ambient kinetic energy can be a viable source. Vibrations in
Georgia Institute of Technology, Atlanta, GA
ISSCC 2013 Session 5 RF & Wireless
SAW-Less Analog Front-End Receivers for TDD and FDD either of the two inputs is low. The divider gives a quadrature 25% duty-cycle clock with -174dBc/Hz phase noise at 20MHz offset for 6mA of current consumption (simulated from extracted layout).
Ivan Fabiano1, Marco Sosio1, Antonio Liscidini1,2, Rinaldo Castello1
*Now at the University of Toronto, Toronto, ON, Canada 2 In cellular receivers, out-of-band blockers are generally managed by surfaceacoustic-wave (SAW) filters between the antenna and the low-noise amplifier (LNA). For
University of Pavia, Pavia, Italy,
ISSCC 2013 Session 5 RF & Wireless
Simultaneous Spatial and Frequency-Domain Filtering at the Antenna Inputs Achieving up to +10dBm Out-of-Band/Beam P1dB
Amir Ghaffari, Eric E.A.M. Klumperink, Frank van Vliet, Bram Nauta
Multi-antenna transceivers with beam-forming are recently gaining interest for low GHz frequencies (<6GHz) [1-4]. In the antenna beam, (phase-shifted) signals from multiple antennas add constructively, improving SNR, whi
University of Twente, Enschede, The Netherlands
ISSCC 2013 Session 5 RF & Wireless
A Phase-Noise and Spur Filtering Technique Using Reciprocal-Mixing Cancellation
Mohyee Mikhemar, David Murphy, Ahmad Mirzaei, Hooman Darabi
Recent passive-mixer-based architectures, such as [1], have shown that blockers as large as 0dBm can be tolerated without excessive gain compression. However, even in a perfectly linear receiver, reciprocal mixing of the
Broadcom, Irvine, CA
ISSCC 2013 Session 5 RF & Wireless
A 30.3dBm 1.9GHz-Bandwidth 2×4-Array Stacked 5.3GHz CMOS Power Amplifier
Maryam Fathi, David K. Su, Bruce A. Wooley
RF power amplifiers (PA) implemented in a scaled CMOS technology typically have a low maximum output power because they operate from a low supply voltage. This paper proposes an array RF PA able to deliver a large output
Stanford University, Stanford, CA
ISSCC 2013 Session 5 RF & Wireless
A 1.8GHz Linear CMOS Power Amplifier with Supply-Path Switching Scheme for WCDMA/LTE Applications
Kohei Onizuka, Shigehito Saigusa, Shoji Otaka
Low-cost CMOS PAs for mobile terminals have been a focus of attention in recent years. Self-contained, linear CMOS PAs are particularly attractive for smooth replacement of conventional compound semiconductor PA products
Toshiba, Kawasaki, Japan
ISSCC 2013 Session 5 RF & Wireless
A New TX Leakage-Suppression Technique for an RFID Receiver Using a Dead-Zone Amplifier Then, IB, (W/L)13, and VLKG, but is not dependent on Vt.
Sang-Sung Lee1, Jaeheon Lee2, In-Young Lee1, Sang-Gug Lee1, Jinho Ko2
continuous wave (CW) to provide energy to the tag while the RX receives data from it. Due to the simultaneous operation of the RX and TX, large TX leakage is the main issue in securing RX sensitivity. Although external i
KAIST, Daejeon, Korea, PHYCHIPS, Daejeon, Korea 1 2 RFID systems use b
ISSCC 2013 Session 5 RF & Wireless
A 200mW 100MHz-to-4GHz 11th-Order Complex Analog Memory Polynomial Predistorter for Wireless Infrastructure RF Amplifiers Frederic Roger
Scintera, Sunnyvale, CA, The trend toward heterogeneous networks encompassing legacy high-power
base stations (macro-BTS) with lightweight and easy to deploy small cells calls for inexpensive and efficient Power Amplifier (PA) linearizers. Current macroBTSs relying on Digital Predistortion Techniques (DPD) are too
ISSCC 2013 Session 6 Medical & Bio
An 87mA·min Iontophoresis Controller IC with DualMode Impedance Sensor for Patch-Type Transdermal Drug Delivery System
Kiseok Song, Unsoo Ha, Jaehyuk Lee, Kyeongryeol Bong, Hoi-Jun Yoo
Iontophoresis enhances drug penetration non-invasively into body tissue by electrical stimulation [1]. Compared with injection and oral dosage, it has advantages in the ease of use, the minimization of side effects, such
KAIST, Daejeon, Korea
ISSCC 2013 Session 6 Medical & Bio
A 1.83µJ/Classification Nonlinear Support-VectorMachine-Based Patient-Specific Seizure Classification SoC
Muhammad Awais Bin Altaf, Judyta Tillak, Yonatan Kifle, Jerald Yoo
To mitigate seizure-affected patients, SoCs [1-3] have been developed 1) to detect electrical onset of seizure seconds before the clinical onset, and 2) to combine the SoC with neurostimulation. In particular, having det
Masdar Institute of Science and Technology, Abu Dhabi, United Arab Emi
ISSCC 2013 Session 6 Medical & Bio
Through-Silicon-Via-Based Double-Side Integrated Microsystem for Neural Sensing Applications
Chih-Wei Chang1, Po-Tsang Huang1, Lei-Chun Chou1, Shang-Lin Wu1,
Shih-Wei Lee1, Ching-Te Chuang1, Kuan-Neng Chen1, Jin-Chern Chiou1,2, Wei Hwang1,3, Yen-Chi Lee3, Chung-Hsi Wu3, Kuo-Hua Chen3, Chi-Tsung Chiu3, Ho-Ming Tong3 National Chiao Tung University, Hsinchu, Taiwan, 2 China Medi
ISSCC 2013 Session 6 Medical & Bio
1µm-Thickness 64-Channel Surface Electromyogram Measurement Sheet with 2V Organic Transistors for Prosthetic Hand Control
Hiroshi Fuketa1,2, Kazuaki Yoshioka1,2, Yasuhiro Shinozuka1,2,
Koichi Ishida1,2, Tomoyuki Yokota1,2, Naoji Matsuhisa1,2, Yusuke Inoue1,2, Masaki Sekino1,2, Tsuyoshi Sekitani1,2, Makoto Takamiya1,2, Takao Someya1,2, Takayasu Sakurai1,2 University of Tokyo, Tokyo, Japan, 2JST/ERATO, T
ISSCC 2013 Session 6 Medical & Bio
A 4b ADC Manufactured in a Fully-Printed Organic Complementary Technology Including Resistors
Sahel Abdinia1, Mohamed Benwadih2, Romain Coppard2,
of Technology, Eindhoven, The Netherlands, CEA-LITEN, Grenoble, France, 3 University of Catania, Catania, Italy, 4 STMicroelectronics, Catania, Italy 1 2 Organic transistors (OTFTs) can be printed on thin plastic substra
Stephanie Jacob2, Giorgio Maiellaro3, Giuseppe Palmisano3, Mariantonie
ISSCC 2013 Session 6 Medical & Bio
An Organic VCO-Based ADC for Quasi-Static Signals Achieving 1LSB INL at 6b Resolution
Daniele Raiteri1, Pieter van Lieshout2, Arthur van Roermund1, Eugenio Cantatore1
read out using RFID protocols, are an important future application of large-area organic electronics. The first steps towards flexible organic electronics were code generators for RFID tags [1]. To realize flexible smart
Eindhoven University of Technology, Eindhoven, The Netherlands, Polyme
ISSCC 2013 Session 6 Medical & Bio
A 1024×8 700ps Time-Gated SPAD Line Sensor for Laser Raman Spectroscopy and LIBS in Space and Rover-Based Planetary Exploration
Yuki Maruyama1, Jordana Blacksberg2, Edoardo Charbon1
Jet Propulsion Laboratory, Pasadena, CA 1 2 Raman spectroscopy is a nondestructive, label-free optical analysis technique used to obtain structural and compositional information without any advance preparation. However,
Delft University of Technology, Delft, The Netherlands,
ISSCC 2013 Session 6 Medical & Bio
Experimental Demonstration of a Fully Digital Capacitive Sensor Interface Built Entirely Using Carbon-Nanotube FETs
Max Shulaker1, Jelle Van Rethy2, Gage Hills1, Hong-Yu Chen1,
Georges Gielen2, H.-S. Philip Wong1, Subhasish Mitra1 Stanford University, Stanford, CA, KU Leuven, Heverlee, Belgium 1 2 Low-power applications, such as sensing, are becoming increasingly important and demanding in term
ISSCC 2013 Session 7 Wireline I/O
A Quad 25Gb/s 270mW TIA in 0.13µm BiCMOS with <0.15dB Crosstalk Penalty
Georgios Kalogerakis, Tim Moran, Thelinh Nguyen, Gilles Denoyer
Finisar, Sunnyvale, CA The push for 100Gb/s optical transport and beyond necessitates electronic components at higher speed and integration level in order to drive down cost, complexity and size of transceivers [1-2]. Th
ISSCC 2013 Session 7 Wireline I/O
A 4× 25-to-28Gb/s 4.9mW/Gb/s -9.7dBm HighSensitivity Optical Receiver Based on 65nm CMOS for Board-to-Board Interconnects
Takashi Takemoto1, Hiroki Yamashita1, Toru Yazaki2, Norio Chujo2,
[4]. The developed TIA (with an offset canceller) reduces peak-to-peak current variations due to offset voltage by 96%. Moreover, I PrA n,rms is reduced from 3.5μArms to 2.6μArms by increasing ZPrA. With an increase in t
Yong Lee1, Yasunobu Matsuoka1 Hitachi, Tokyo, Japan, Hitachi, Kanagawa
ISSCC 2013 Session 7 Wireline I/O
100Gb/s Ethernet Chipsets in 65nm CMOS Technology
Jhih-Yu Jiang1, Ping-Chuan Chiang1, Hao-Wei Hung1, Chen-Lun Lin1,
Note that ISS is properly biased by constant IR circuit, whose on-chip resistor experiences the same variation as RD does. With RB and CB providing unaltered bias point to M2, signal current Iin flows through RF and curr
Ty Yoon2, Jri Lee1 National Taiwan University, Taipei, Taiwan, Basas M
ISSCC 2013 Session 7 Wireline I/O
A Blind Baud-Rate ADC-Based CDR
Clifford Ting1, Joshua Liang1, Ali Sheikholeslami1, Masaya Kibune2, Hirotaka Tamura2
ter tolerance degradation in one of two ways. First, clock skew would appear effectively as high-frequency periodic jitter. Second, the interleaved I&D blocks would experience a gain mismatch because the integration is p
ISSCC 2013 Session 7 Wireline I/O
A Ring-Resonator-Based Silicon Photonics Transceiver with Bias-Based Wavelength Stabilization and Adaptive-Power-Sensitivity Receiver ratio at the input wavelength of 1286.93nm. The maximum tuning power is 425μW for a resonance range of 0.22nm, which can be leveraged as a fine-control in a dual thermal/bias tuning scheme to improve overall tuning efficiency.
Cheng Li , Rui Bai , Ayman Shafik , Ehsan Zhian Tabasy , Geng Tang ,
Chao Ma2, Chin-Hui Chen3, Zhen Peng3, Marco Fiorentino3, Patrick Chiang2,4, Samuel Palermo1 1 2 1 1 1 Texas A&M University, College Station, TX, Oregon State University, Corvallis, OR, 3 Hewlett Packard, Palo Alto, CA, 4
ISSCC 2013 Session 7 Wireline I/O
A 1.23pJ/b 2.5Gb/s Monolithically Integrated Optical Carrier-Injection Ring Modulator and All-Digital Driver Circuit in Commercial 45nm SOI
Benjamin R. Moss1, Chen Sun1, Michael Georgas1, Jeff Shainline2,
Jason S. Orcutt1, Jonathan C. Leu1, Mark Wade2, Yu-Hsin Chen1, Kareem Nammari2, Xiaoxi Wang1, Hanqing Li1, Rajeev Ram1, Milos A. Popovic2, Vladimir Stojanovic1 Massachusetts Institute of Technology, Cambridge, MA, Univer
ISSCC 2013 Session 7 Wireline I/O
A 20Gb/s NRZ/PAM-4 1V Transmitter in 40nm CMOS Driving a Si-Photonic Modulator in 0.13µm CMOS
Xiaotie Wu1, Bipin Dama2, Prakash Gothoskar2, Peter Metz2, Kal Shastri2,
Sanjay Sunder2, Jan Van der Spiegel1, Yifan Wang2, Mark Webster2, Will Wilson2 because a smaller inverter can be used for a reduced segment capacitance, and the effective capacitance is also reduced since not all segment
ISSCC 2013 Session 7 Wireline I/O
Optical Receivers Using DFE-IIR Equalization
Jonathan Proesel, Alexander Rylyakov, Clint Schow
Future computing systems will require increasingly high bandwidth to supply data to microprocessors, FPGAs, and other computational blocks [1,2]. Increasing data rate is a common solution, as I/O pad density is not scali
IBM Research, Yorktown Heights, NY
ISSCC 2013 Session 7 Wireline I/O
A 10Gb/s 6Vpp Differential Modulator Driver in 0.18µm SiGe-BiCMOS
Yi Zhao1, Leonardo Vera1, John R. Long1, David L. Harame2, spacing). Electric induction creates a virtual ground (~0V) o
ISSCC 2013 Session 8 mm-Wave
A 210GHz Fully Integrated Differential Transceiver with Fundamental-Frequency VCO in 32nm SOI CMOS
Zheng Wang1, Pei-Yuan Chiang1, Peyman Nazari1, Chun-Cheng Wang2,
Institute of Technology, Beijing, China 1 3 The vastly under-utilized spectrum in the sub-THz frequency range enables disruptive applications including 10Gb/s chip-to-chip wireless communications and imaging/spectroscopy
Zhiming Chen3, Payam Heydari1 University of California, Irvine, CA, 2P
ISSCC 2013 Session 8 mm-Wave
A 260GHz Broadband Source with 1.1mW Continuous-Wave Radiated Power and EIRP of 15.7dBm in 65nm CMOS
Ruonan Han, Ehsan Afshari
Terahertz spectroscopy using silicon technology is gaining attraction for future portable and affordable material identification equipment. To do this, a broadband THz radiation source is critical. Unfortunately, the ban
Cornell University, Ithaca, NY
ISSCC 2013 Session 8 mm-Wave
A 260GHz Amplifier with 9.2dB Gain and -3.9dBm Saturated Power in 65nm CMOS Omeed Momeni
University of California, Davis, CA, Terahertz and millimeter-wave systems are known to have unique and significant
applications in health, security and industry. Recently, CMOS technology is used to implement these systems for applications such as imaging, high-speed communication and radar [1]. Signal amplification for the target TH
ISSCC 2013 Session 8 mm-Wave
A 0.7W Fully Integrated 42GHz Power Amplifier with 10% PAE in 0.13µm SiGe BiCMOS
Wei Tai1, L.Richard Carley1, David S. Ricketts2
North Carolina State University, Raleigh, NC 1 2 In this paper, we report a fully integrated power amplifier (PA) architecture that combines the power of 16 on-chip PAs using a 16-way zero-degree combiner to achieve an o
Carnegie Mellon University, Pittsburgh, PA,
ISSCC 2013 Session 8 mm-Wave
A 93-to-113GHz BiCMOS 9-Element Imaging Array Receiver Utilizing Spatial-Overlapping Pixels with Wideband Phase and Amplitude Control
Francis Caster II, Leland Gilreath, Shiji Pan, Zheng Wang,
silicon technologies have recently shown the capability of implementing W-band imaging receivers with an image resolution of 1.5mm and temperature resolutions of less than 0.5K [1-4]. This paper extends the capability of
Filippo Capolino, Payam Heydari University of California, Irvine, CA B
ISSCC 2013 Session 8 mm-Wave
A 94GHz 3D-Image Radar Engine with 4TX/4RX Beamforming Scan Technique in 65nm CMOS 88 to 96GHz with less than 1dB degradation. The fundamental and 2nd-order rejections are greater than 35 and 25dB, respectively.
Pang-Ning Chen, Pen-Jui Peng, Chiro Kao, Yu-Lun Chen, Jri Lee
Figure 8.6.4(a) depicts the 94GHz 7-bit phase shifter with two-step phase interpolation. The vector generator consists of a 90° coupler and 2 baluns, converting RF input into differential quadrature signals. The desired