National Key Laboratory of Solid-State Microwave Devices and Circuits

ISSCC 2026 Session 20 RF & Wireless

A 330-to-344GHz GaN Power Amplifier with Maximum-Available-Gain-Boosting Technique and Compact Tandem Coupler Achieving 86mW Output Power at 340GHz

Weibo Wang*1,2, Wenhua Chen*3, Kenan Xie*4, Chenjie Luo2, Yibin Zhang2, Dechun Shang2, Ziwei Jiang2, Guodong Yu2, Yan Ch

Tianjin University, Tianjin, China *Equally Credited Authors (ECAs) 1 4 Abstract This paper demonstrates a 330-to-344GHz GaN power amplifier (PA), fabricated using a 35nm GaN HEMT process with a 15-stage cascaded archite

National Key Laboratory of Solid-State Microwave Devices and Circuits,

ISSCC 2025 Session 33 Other

A 216-to-226GHz Watt-Level GaN Solid-State Power Amplifier with Multiband Large-Signal Impedance Correction and Circuit-Package Co-Design Technique

Weibo Wang*1,2, Zhe Li*3, Kai Li3, Haifeng Cheng1,2, Fangjin Guo1,2, Yibin Zhang1,2, Keping Wang3

Tianjin, China 1 2 *Equally Credited Authors (ECAs) Compact and integrated 220GHz solid-state power amplifiers (SSPAs) are important in enabling future high-data-rate wireless communication, imaging, and radar systems. S

National Key Laboratory of Solid-State Microwave Devices and Circuits,