A 216-to-226GHz Watt-Level GaN Solid-State Power Amplifier with Multiband Large-Signal Impedance Correction and Circuit-Package Co-Design Technique

📋 论文概要

本文提出了一款216-226GHz瓦特级GaN固态功率放大器，通过多频带大信号阻抗校正和电路技术解决了高频段功率放大器的低阻抗和带宽限制问题，实现了紧凑集成的高功率输出。

💡 主要创新点

• 采用多频带大信号阻抗校正技术，在216-226GHz频段内优化阻抗匹配，提升带宽和功率效率。
• 基于GaN工艺实现瓦特级输出功率，克服了传统硅基和III-V族器件在>200GHz频段低电压高电流模式的局限。

🏷 关键词

📄 原文摘要

Tianjin, China 1 2 *Equally Credited Authors (ECAs) Compact and integrated 220GHz solid-state power amplifiers (SSPAs) are important in enabling future high-data-rate wireless communication, imaging, and radar systems. Silicon (CMOS and SiGe) and III-V (GaAs and InP) technologies have been widely used to design PAs at frequencies >200GHz [1-3]. However, due to the low operating voltage of these devices (typically <2V for a single stacked transistor), the final stage of the PA is often in a low-voltage and high-current mode. The equivalent impedance is very low, which limits the bandwidth and output power density [4-6]. Due to their wide bandgap characteristic, higher voltage tolerance, and high electron saturation drift velocity, GaN HEMTs are becoming a

👥 作者与机构

Weibo Wang*1,2, Zhe Li*3, Kai Li3, Haifeng Cheng1,2, Fangjin Guo1,2, Yibin Zhang1,2, Keping Wang3

National Key Laboratory of Solid-State Microwave Devices and Circuits, Nanjing, China Nanjing Electronic Device Institute, Nanjing, China 3 Tianjin University,