A 330-to-344GHz GaN Power Amplifier with Maximum-Available-Gain-Boosting Technique and Compact Tandem Coupler Achieving 86mW Output Power at 340GHz

📋 论文概要

该论文展示了一款采用35nm GaN HEMT工艺的330-344 GHz功率放大器，通过最大可用增益提升技术和紧凑型Tandem耦合器，解决了太赫兹频段增益低、合路损耗大的问题。最终实现了超过21dB增益和18dBm饱和输出功率，峰值功率密度达0.925W/mm。

💡 主要创新点

• 提出最大可用增益提升技术，在THz频段有效增强级联放大器的增益性能。
• 设计小型化Tandem耦合器，降低端口反射和合路损耗，提升功率合成效率。

🏷 关键词

📄 原文摘要

Tianjin University, Tianjin, China *Equally Credited Authors (ECAs) 1 4 Abstract This paper demonstrates a 330-to-344GHz GaN power amplifier (PA), fabricated using a 35nm GaN HEMT process with a 15-stage cascaded architecture. The maximum-availablegain-boosting technique enhances the high frequency gain, while the miniaturized Tandem coupler reduces port reflection and combining losses. The PA achieves >21dB gain, >18dBm saturated output power (PSAT), and >0.6% power-added efficiency. The peak PSAT reaches 19.3dBm at 340GHz, with a power density exceeding 0.925W/mm. The 340GHz frequency range, serving as a critical “atmospheric window,” plays an indispensable role in systems such as high-frequency communications and radar imaging. Traditional silicon-based (CMOS and SiGe) and III-V (GaAs and InP) power amplifiers (PAs) have exhibited marginal improvements in saturated output power (Pout) within this frequency

👥 作者与机构

Weibo Wang*1,2, Wenhua Chen*3, Kenan Xie*4, Chenjie Luo2, Yibin Zhang2, Dechun Shang2, Ziwei Jiang2, Guodong Yu2, Yan Chen2, Keping Wang4

National Key Laboratory of Solid-State Microwave Devices and Circuits, Nanjing, China, 2Nanjing Electronic Device Institute, Nanjing, China, 3Tsinghua University, Beijing, China,