技术领域

RF & Wireless

362 篇相关论文 (2008–2026)

ISSCC 2026 Session 34 RF & Wireless
A 0.0523mm2 11.4mW IEEE 802.15.4a/z/ab Compatible Aliasing-Suppressing All-Digital IR-UWB Transmitter Featuring Comb-Notched Maximally Flat Amplitude Spectral Shaping
Jihun Son, Minsu Park, Chansoo Park, Kyoungtae Lee, Jong-Hyeok Yoon, Junghyup Lee, Minyoung Song
Abstract This work presents an IEEE 802.15.4a/z/ab compatible IR-UWB TX using an anti-phase delayed dual-Gaussian pulse with self-delay pulse comb-notch to maximize the spectrum utilization while meeting global masks. A
Daegu Gyeongbuk Institute of Science and Technology, Daegu, Korea
ISSCC 2026 Session 34 RF & Wireless
A 1.6-to-3.8GHz Reconfigurable FMCW Radar SoC with 81.5% Relative-Bandwidth PLL for Real-Time Life Detection in Disaster Response
Renjie Fu*1, Linxu Shi*1, Fanxun Cai1, Yunqi Yang1, Hao Lei1, Zhigang Fu1, Yilin Xu1, Pengcheng Wang1, Ziyang Li1, Shixu
Lianbo Wu1,2, Guangzhong Zhang3, Naike Du3, Zijie Wang1, Yucong Gu1, Xiuzhu Ye3, Xiao Fang1, Weisheng Zhao1,2, Hui Zhang1,2 Beihang University, Beijing, China, 2Tianmushan Laboratory, Hangzhou, China, 3Beijing Institute
ISSCC 2026 Session 34 RF & Wireless
A 234-to-252GHz Dual-Polarized Transceiver Using Antenna-in-Package Technologies for Cross-Polarimetric Sensing
Xibi Chen1, Georgios C. Dogiamis2,3, Ruonan Han1
Abstract We present a 234-to-252GHz dual-polarized monostatic CMOS (Intel16) transceiver for cross-polarimetric sensing, with antenna-in-package (AiP) technology and a 10&10mm2 modular system assembly. The AiP achieves 6
Massachusetts Institute of Technology, Cambridge, MA, 2Intel, Chandler
ISSCC 2026 Session 34 RF & Wireless
A 128mW 2×4 Radar-on-Chip with Forward-ΔΣ DPLL-Locked Multi-Injection RTWO in 22nm CMOS Enabling ADC-Free Digitization and PS-Free Beamforming Demonstrated in In-Cabin Vital-Sign Monitoring
Liheng Lou1, Zeyu Zhou1, Luyao Yuan1, Yucheng Long1, Gong Chen2, Xiaoyu Li3, Shaoqi Yang1, Han Cui1, Ji Peng1, Weichen T
Abstract A 2&4 phased-array SIL radar-on-chip in 22nm CMOS is demonstrated for in-cabin vitalsign monitoring. Built on a forward-ΔΣ DPLL-locked multi-injection RTWO at 20GHz, it concurrently serves as (de)modulator, beam
University of Science and Technology of China, Hefei, China, 2National
ISSCC 2026 Session 33 RF & Wireless
A 4.5-to-7.2GHz Beyond Rail-to-Rail Output SCPA with 27.9dBm Pout and 46.2% DE at 5.1GHz Using Periodic Voltage-Pacing Network
Bingzheng Yang1,2, Jie Zhou1, Junfa Mao1, Xun Luo1
Abstract This work presents a switched-capacitor power amplifier (SCPA) using periodic voltagepacing network, capable of generating output voltage beyond conventional rail-to-rail limit, which enhances both the output po
Shenzhen University, Shenzhen, China, 2University of Electronic Scienc
ISSCC 2026 Session 33 RF & Wireless
A 6GHz Quadrature Digital Transmitter Supporting a 1GHz Signal Bandwidth with <-40dB EVM Floor and >55dB Dynamic Range in 28nm CMOS
Yicheng Li*, Feng Xie*, Yun Yin, Lixuan Cao, Tianze Yang, Jiaxiang Li, Hongtao Xu
*Equally Credited Authors (ECAs) Abstract A 6GHz quadrature DTX supporting a 1GHz signal bandwidth is presented in 28nm CMOS, where static and dynamic nonlinearities are carefully optimized. Occupying a core area of 0.67
Fudan University, Shanghai, China
ISSCC 2026 Session 33 RF & Wireless
An Infinite-Loop CMOS-Compatible Isolator Enabled True VSWR-Resilient Power Amplifier for 6G FR3 in Massive MIMO and Phased-Array Systems
Mohsen Ghorbanpoor1,2, Mohamed Eleraky2, Konstantinos Manetakis1, Pascal Nussbaum1, Hua Wang2
Abstract This work presents a balanced power amplifier (PA) featuring a time-varying output matching network designed to suppress unwanted reflections and couplings in phased array and MIMO systems. By leveraging lossy n
CSEM, Neuchatel, Switzerland, 2ETH Zurich, Zurich, Switzerland
ISSCC 2026 Session 33 RF & Wireless
A 22-to-25GHz CMOS Non-Magnetic Balanced Circulator Achieving at Least 20dB TX-RX Isolation for an Antenna VSWR of 2
Heqi Deng, Ehsan Shokrolahzade, Niels Fakkel, Marco Spirito, Fabio Sebastiano, Masoud Babaie
Abstract This paper presents a mm-wave non-magnetic balanced circulator that bridges the gap between the high insertion loss (IL) of electrical balance duplexers and the transmitter (TX)to-receiver (RX) isolation degrada
TU Delft, Delft, The Netherlands
ISSCC 2026 Session 21 RF & Wireless
A -82.3dB THD+N 60V Fully Integrated Shunt-Resistor-Based In-Line Current Sensor with DLL-Assisted Dynamic Body-Biasing Technique
Heng Ma, Huajun Zhang, Qinwen Fan
Abstract Floating-Gm-based current sensors are effective in rejecting PWM common-mode voltage. But their linearity drops at high voltages due to substrate-current-induced body effect in LDMOS devices. To address this iss
TU Delft, Delft, The Netherlands
ISSCC 2026 Session 21 RF & Wireless
A CMOS Hybrid Common-Gate Current-Integrating Sampler with >37dB SNDR Across 51GHz BW in a 128GS/s Front-End
Jun Dai1, Yi Zhong1, Yunsong Tao1, Aodong Zhang1, Mingtao Zhan1, Hao Zhang2, Lu Jie1, Nan Sun1
Abstract This work proposes a CMOS hybrid common-gate current integrating sampler to address linearity, BW, and jitter limitations in prior wideband ADC front-ends. The front-end employs a hybrid common-gate V-I converte
Tsinghua University, Beijing, China, 2Magnichip, Nanjing, China
ISSCC 2026 Session 21 RF & Wireless
A Battery-Free Wireless Electrochemical-Interface SoC Featuring 143dB Dynamic Range for Multimodal Wearables
Weixiao Wang, Yili Shen, Tianyi Cai, Qijing Xiao, Yuxuan Luo, Bo Zhao
Abstract A battery-free wireless electrochemical-interface SoC is implemented and demonstrated in a sweatband prototype for physiological monitoring in body sweat, where the proposed techniques improve the dynamic range
Zhejiang University, Hangzhou, China
ISSCC 2026 Session 21 RF & Wireless
A ±60mA-Inaccuracy Low-Side Average Current Sensor with Operating-Conditions-Insensitive Control Supporting 0.1-to-3A Load Range and Sub-100ns Sample Time for Automotive USB Charge Application
Jian-Jun Kuang1,2, Xin Ming1, Xin-Ce Gong1, Tian-Chen Lang2, Xiang Geng2, Bo Zhang1
Abstract In Paper 21.6, UESTC and SouthChip Semiconductor Technology present a low-side average current sensor for automotive USB charging, which supports 0.1-to-3A load range and sub100ns sample time with ±60mA inaccura
University of Electronic Science and Technology of China, Chengdu, Chi
ISSCC 2026 Session 21 RF & Wireless
A 0.6V 625um2 Fully Stacked RC-Based Temperature Sensor Using Low TCR Metal Resistor Achieving 0.017nJ·%2-Accuracy FoM in 2nm Gate-All-Around Process
Haejung Choi, Jooseong Kim, Woojoong Jung, Sungmin Yoo, Jun-Hyeok Yang, Sunghyuck Lee, Jihye Park, Michael Choi, Ben Rhe
Abstract The proposed RC-based temperature sensor, fabricated on a 2nm gate-all-around process, minimizes silicon area by fully stacking low temperature coefficient of resistance (TCR) metal resistors and a ring-oscillat
Samsung Electronics, Yongin, Korea
ISSCC 2026 Session 21 RF & Wireless
A Background-Calibrated NPN-Based Temperature Sensor with 0.05°C (3σ) Inaccuracy from -70°C to 125°C
Nandor G. Toth, Kofi A. A. Makinwa
Abstract In this work, an NPN-based temperature sensor is presented that introduces a backgroundcalibration scheme to correct all current-domain errors in its front-end. It achieves an inaccuracy of 0.05°C (3σ) from -70°
TU Delft, Delft, The Netherlands
ISSCC 2026 Session 21 RF & Wireless
A Temperature- and Aging-Compensated TMR Current Sensor with ±0.13% Sensitivity Variation from -40°C to 120°C
Tianxiang Qu, Nan Wang, Kaiwen Zhou, Jiayao Liu, Longxi Xiang, Mingqian Sun, Zhiliang Hong, Xiaoyang Zeng, Jiawei Xu
Abstract This paper presents a TMR-based contactless current sensor that mitigates sensitivity drift due to temperature and aging. The proposed sensitivity stabilization loop continuously adjusts the TMR sensitivity, mak
Fudan University, Shanghai, China
ISSCC 2026 Session 21 RF & Wireless
A Fully Integrated GMR Biosensor with On-Chip Coils and Sensors Achieving 605 Resolution FoM for Multiplexed PoC Diagnostics
Mengze Wu1, Remy Lassalle-Balier2, Pablo Aguirre3, Florencia Ferrer3, Sina Haji Alizad4, Shekher Kummari1, Alex Latham4,
Abstract This paper presents a fully integrated GMR biosensor chip for point-of-care in vitro diagnostics featuring on-chip sensors, excitation coils, and a digital back-end. The system achieves 120nTrms noise, 0.38ppm s
University of California, San Diego, CA, 2Allegro MicroSystems, Chavan
ISSCC 2026 Session 20 RF & Wireless
A 16-to-256QAM G-Band Subharmonic Phase-Modulating Transmitter for Beyond-5G Communications
Jia Zhou1, Jieqiong Du1, Chao-Jen Tien1, Jhih-Wei Chen1, Ruei-Chen Soong1, Francisco Cardenas Beltran1, Lachlan Cuskelly
Angeles, CA, 3NXP Semiconductors, San Jose, CA. 1 Abstract This paper presents a highly integrated G-band digital transmitter for beyond-5G communications featuring: 1) a subharmonic phase-modulating architecture with ti
Adrian Tang1,2, Sai-Wang Tam3, Mau-Chung Frank Chang1 University of Ca
ISSCC 2026 Session 20 RF & Wireless
An Ultra-Compact D-Band Transceiver Front-End Based on a Common-Gate Bidirectional Amplifier Achieving 11.2dBm TX Psat and 8.2dB RX Average NF for an Area-Constrained 2D Beamformer AiP
Syed Mohammad Ashab Uddin1,2, Wooram Lee1
Abstract An ultra-compact D-band transceiver based on a common-gate bi-directional amplifier is presented in a 45nm RFSOI process for an area-constrained 2D beamformer antenna-inpackage. By employing a switchless symmetr
Pennsylvania State University, University Park, PA, 2Texas Instruments
ISSCC 2026 Session 20 RF & Wireless
A 330-to-344GHz GaN Power Amplifier with Maximum-Available-Gain-Boosting Technique and Compact Tandem Coupler Achieving 86mW Output Power at 340GHz
Weibo Wang*1,2, Wenhua Chen*3, Kenan Xie*4, Chenjie Luo2, Yibin Zhang2, Dechun Shang2, Ziwei Jiang2, Guodong Yu2, Yan Ch
Tianjin University, Tianjin, China *Equally Credited Authors (ECAs) 1 4 Abstract This paper demonstrates a 330-to-344GHz GaN power amplifier (PA), fabricated using a 35nm GaN HEMT process with a 15-stage cascaded archite
National Key Laboratory of Solid-State Microwave Devices and Circuits,
ISSCC 2026 Session 20 RF & Wireless
OP1dB Deviation (dB) 14.0 13.5 12.5 PAE (%) PAE (%) Power Gain (dB) Pout (dBm) VSWR @ 13GHz Pout (dBm) PG Deviation (dB) VSWR Angle (o) RIMD7U VSWR @ 13GHz VSWR Angle (o) VSWR Angle (o) PAEOP1dB -PAEOP1dB@50Ω 48.25dBc RIMD5U Main Tone RIMD7L RIMD5L RIMD3L 27.5dBc Coupled Tone RIMD3U PG Deviation (dB) Pout (dBm) PG Deviation (dB) VSWR @ 13GHz PAEOP1dB -PAEOP1dB@50Ω Large Signal Performance PAEOP1dB -PAEOP1dB@50Ω OP1dB Deviation (dB) S12 S22 VSWR 4:1 OP1dB Deviation (dB) Power Gain (dB) S11 VSWR 3:1 PAE (%) Power Gain (dB) VSWR 2:1 CW @ 12.25GHz S21
Figure 20.4.3: Measured PA S-parameters, stability factors, and large-signal, VSWR Angle (o)
VSWR Angle (o) VSWR Angle (o) performance at 12.25GHz (top), and across the frequency (bottom right); and the RIMD Figure 20.4.4: Large-signal performance of the PA across the 12.5-to-14.5GHz frequency range under three
ISSCC 2026 Session 20 RF & Wireless
A mm-Wave Doherty Power Amplifier in a Single-Path Footprint Using Compact Reciprocal Doherty Networks
Lianbo Liu1, Yidong Fang1, Qiang Zhou2, Taiyun Chi2, Sensen Li1
Abstract This paper presents a compact, single-path-footprint Doherty PA with minimized passive network areas. A systematic analysis for its realization is developed based on the proposed theory of reciprocal Doherty net
University of Texas, Austin, TX, 2Rice University, Houston, TX
ISSCC 2026 Session 20 RF & Wireless
A High Back-off Efficiency Unequal-Stacked Doherty Power Amplifier Achieving 16.7dBm Pavg in a 22nm FDSOI CMOS Technology for 5G FR2 Applications
Seungwon Park, Jooseok Lee, Seungjae Baek, Taewan Kim, Yifei Chen, Sehyug Jeon, Sung-gi Yang
Abstract This paper proposes an unequal-stacked Doherty power amplifier. The proposed Doherty structure consists of a common-source topology for the carrier amplifier and an N-stacked topology for the peaking amplifier w
Samsung Electronics, Seoul, Korea
ISSCC 2026 Session 20 RF & Wireless
A 215GHz 8×8 Radiator-Oscillator Array with Robust Coupling Achieving 25.5dBm EIRP and 12.9% FTR
Ahmed Elmenshawi1, Sriram Muralidharan2, Mona M. Hella1
Abstract A 215GHz 8×8 radiator-oscillator array with robust coupling achieving 25.5dBm average EIRP over a 12.9% continuous frequency tuning range. The proposed coupling scheme, based on distributed coupling through mult
Rensselaer Polytechnic Institute, Troy, NY, 2Oso Semiconductor, Berkel
ISSCC 2026 Session 20 RF & Wireless
A 214-to-242GHz Miniaturized Co-Packaged PA-Antenna Array with 29dBm Lens-less EIRP in a 0.13μm SiGe Process
Qianqi Meng, Zhihua Wang, Peigen Zhou, Dawei Tang, Siyuan Tang, Junyue Xiao, Rui Zhou, Jinben Li, Zhe Chen, Jixin Chen,
Abstract This work presents a miniaturized, high-power, and wideband THz PA-antenna array, realizing 29dBm lens-less peak EIRP from 214 to 242GHz. To improve the BW and Psat of the PA, a folded 10th-order power-splitting
Southeast University, Nanjing, China
ISSCC 2026 Session 20 RF & Wireless
An Ultra-Compact Asymmetrically Load-Pulled Series Doherty Power Amplifier in 22nm FDSOI CMOS with 25.3dBm Psat and 29.7% PAE6dB for Ku-Band 6G FR3
Jinglong Xu1, Tzu-Yuan Huang1,2, Mohamed Eleraky1, Islam Tolaib1, Hua Wang1
Abstract This paper presents an ultra-compact asymmetrically load-pulled series Doherty PA in 22nm CMOS SOI with a single-footprint output combiner. A quantitative analysis of a single transformer as an impedance inverte
ETH Zurich, Zurich, Switzerland, 2ARGUS SPACE AG, Zurich, Switzerland
ISSCC 2025 Session 5 RF & Wireless
A 21-to-31GHz DPD-less Quadrature RFDAC with Invariant Impedance and Scalable LO Leakage
Huizhen Jenny Qian, Wubo Qin, Chenxi Qiu, Yintang Yang
The increasing data-rates of modern wireless communication systems require transmitters with high linearity to support high-order QAM modulation and wide modulation bandwidths. Digital transmitters based on RF digital-to
Xidian University, Xi’an, China
ISSCC 2025 Session 5 RF & Wireless
A 20W CMOS/LDMOS All-Digital Transmitter with Dynamic
Retiming and Glitch-Free Phase Mapper, Achieving 68%/62%, Peak Drain/System Efficiency
Dieuwert Peter Nicolaas Mul1, Rob J Bootsman1, Mohammadreza Beikmirza1, Ossama El Boustani1, Yiyu Shen1, Daniel Maassen2, Bart van Velzen2, Mohadig Rousstia2, Ronald Koster2, John R Gajadharsing2, Thomas Fritzsch3, Morte
ISSCC 2025 Session 5 RF & Wireless
A Power-Efficient CORDIC-less Digital Polar Transmitter Using 1b DSM-Based PA Supporting 256-QAM
Yuncheng Zhang, Zezheng Liu, Duo Li, Minzhe Tang, Yi Zhang, Hongye Huang,
Dingxin Xu, Waleed Madany, Ashbir Aviat Fadila, Wenqian Wang, Yuang Xiong, Daxu Zhang, Garry Pranata Kusuma, Hiroyuki Sakai, Kazuaki Kunihiro, Atsushi Shirane, Kenichi Okada Institute of Science Tokyo, Tokyo, Japan CMOS
ISSCC 2025 Session 5 RF & Wireless
An Ultra-Compact Wideband Load-Insensitive Complex-Cascode LC-Neutralized Power Amplifier for 4:1-VSWR-Resilient Operations in Large-Scale Phased Arrays
Mohamed Eleraky1, Tzu-Yuan Huang1,2, Hua Wang1
ARGUS SPACE AG, Zurich, Switzerland 1 2 Large-scale mm-wave phased arrays are crucial for the success of next-generation 5G/6G communication. Yet, using a dense array of antennas inevitably leads to mutual coupling betwe
ETH Zürich, Zürich, Switzerland
ISSCC 2025 Session 5 RF & Wireless
A 22nm FDSOI CMOS-Based Compact 3-Stack Doherty Power Amplifier with a Stacked OPA-Based Bias Scheme Achieving >16.5dBm Pavg for 5G FR2 Applications
Jooseok Lee, Hansik Oh, Seungjae Baek, Seungwon Park, Dongsoo Lee,
interest in the millimeter-wave (mm-wave) band. In this frequency range, phased-array systems are crucial for sustaining communication performance despite high propagation loss. In highly integrated phased-array systems,
Sehyug Jeon, Taewan Kim, Joonho Jung, Sung-gi Yang Samsung Electronics
ISSCC 2025 Session 5 RF & Wireless
A 56-to-64GHz Linear Power Amplifier with 30.2dBm Psat and 23.5% PAEpeak Using Scalable Matched-Zone-Expanding Radial Power Combining with EM-Loss Reduction in 40nm Bulk CMOS
Deshan Tang, Bingzheng Yang, Aoran Han, Xun Luo
Increasing demands on millimeter-wave (mm-wave) wireless transmission, including 5G NR FR2-2 and SATCOM, require low-cost, high-power, and high-efficiency power amplifier (PA) supporting multi-Gb/s data-rates. A major ch
University of Electronic Science and Technology of China, Chengdu, Chi
ISSCC 2025 Session 5 RF & Wireless
Spatial-Temporal Direct-Digital Beamforming Power Amplifier with Enhanced Back-Off Efficiency in a 24GHz Phased Array
Yutian Zhao1, Yiyang Song1, Weiyan Gu1, Shiyuan Yu1, Zhehao Yu2, Yuxiang Han1,
mm-Wave transmitters face challenges such as degraded back-off efficiency and the use of low-efficiency and bulky phase shifters when transmitting high-order constellations with a typical peak-to-average power ratio (PAP
Xinen Zhu3, Xuyang Lu1 Shanghai Jiao Tong University, Shanghai, China
ISSCC 2025 Session 5 RF & Wireless
A Blocker-Tolerant mm-Wave Low-Noise Amplifier Utilizing Doherty Active Load Modulation for Linearity Enhancement
Hao Yu, Lianbo Liu, Sensen Li
Conventionally, the linearity of receivers (RXs) or low-noise amplifiers (LNAs) has not been a primary design focus, as they are generally optimized for handling weak input signals. However, emerging applications such as
University of Texas, Austin, TX
ISSCC 2025 Session 5 RF & Wireless
A 3.5mW mm-Wave Low-Noise Active Bandpass Filter Employing an All-Passive Interferer-Cancellation Feedforward Path
Ahmed Gharib Gadelkarim, Patrick Mercier
Millimeter-wave (mm-wave) frequencies are widely used in applications that require high throughput and/or small sizes thanks to the wide available bandwidth and small achievable antenna-array sizes. Applications such as
University of California, San Diego, CA
ISSCC 2025 Session 5 RF & Wireless
A GaN SLCG-Doherty-Continuum Power Amplifier Achieving >38% 6dB Back-Off Efficiency over 1.35 to 7.6GHz
Guansheng Lv1, Wenhua Chen1, Xiaofan Chen1, Fei Huang2, Zhenghe Feng1
Gaxtrem Technology, Beijing, China 1 2 To maximize throughput, wireless standards often mandate channels with hundreds of MHz bandwidths (BWs) over multiple non-contiguous bands. In addition, as spectrally efficient comp
Tsinghua University, Beijing, China
ISSCC 2025 Session 36 RF & Wireless
A 212Gb/s PAM-4 Retimer with Integrated High-Swing Optical Driver and Chip-to-Module Long Reach Capability of 40dB in 5nm FinFET
V Gurumoorthy1, A Tan1, A Iyer1, A Fan2, A Farhoodfar1, B Alnabulsi3, B Helal1,
C Abidin2, C Loi4, D Cartina5, H Lo1, I Fabiano6, J Riani1, J H Teo4, J Q Wang1, K Raviprakash1, K K Ravi Prakash1, L Cai4, L Patra1, M Bachu1, N Codega6, N Shivashankar1, S Ray1, S Chong4, S Jafarlou2, S Yu4, T-F Wu2, W
ISSCC 2025 Session 36 RF & Wireless
A 100Gbaud 4Vppd Distributed Linear Driver with Cross-Folded Transmission Lines and Cross-Coupled Gm Cells for Built-in 5-Tap FFE in 0.13μm SiGe BiCMOS
Fuzhan Chen1,2, C. Patrick Yue2, Quan Pan1
Hong Kong University of Science and Technology, Hong Kong, China 1 2 Linear pluggable optics (LPO) emerges as an attractive candidate for short-reach optical communications for its low power consumption, low cost and low
Southern University of Science and Technology, Shenzhen, China
ISSCC 2025 Session 36 RF & Wireless
A 1.54pJ/b 64Gb/s 16-QAM Intradyne Coherent Optical Receiver in 28nm CMOS
Ahmed E. Abdelrahman, Mohamed Badr Younis, Mohamed Osama Selim,
Mohamed Saad Aly, Mahmoud A. Khalil, Pavan Kumar Hanumolu University of Illinois, Urbana, IL As the demand for high-speed data transmission within data centers continues to grow, scaling existing short-reach optical link
ISSCC 2025 Session 36 RF & Wireless
A 112Gb/s 0.61pJ/b PAM-4 Linear TIA Supporting Extended PD-TIA Reach in 28nm CMOS
Yangyi Zhang*, Zhenyu Yao*, Wentao Zhou*, Xiongshi Luo, Zhenghao Li,
artificial intelligence applications pushes optical communications to higher data rates and lower cost. Co-packaging the PD, BiCMOS TIA, and CMOS switch ASIC on the same substrate can effectively improve signal integrity
Dongshen Zhan, Quan Pan Southern University of Science and Technology,
ISSCC 2025 Session 36 RF & Wireless
A Low-Latency 200Gb/s PAM-4 Heterogeneous Transceiver in 0.13μm SiGe BiCMOS and 28nm CMOS for Retimed Pluggable Optics
Renjie Tang*, Kanan Wang*, Shuyi Xiang, Yu Su, Chenyao Cao, Yukun He, Xiaoyan Gui
intelligence (AI) requires further bandwidth enhancement and has pushed SerDes towards 200G/lane [1]. Linear-drive pluggable optics (LPO) without integrated retimer or digital signal processer (DSP) has drawn great atten
Xi’an JiaoTong University, Xi’an, China *Equally Credited Authors (ECA
ISSCC 2025 Session 36 RF & Wireless
A 0.9pJ/b 108Gb/s PAM-4 VCSEL-Based Direct-Drive Optical Engine
Sashank Krishnamurthy*, Susnata Mondal*, Junyi Qiu, Tolga Acikalin,
applications necessitates advancements in data transmission. Increasingly complex, power-hungry equalization and digital signal processing (DSP) techniques limit electrical interconnect scalability and reach. Pluggable o
Soumya Bose, Shuhei Yamada, James Jaussi, Mozhgan Mansuri Intel, Hills
ISSCC 2025 Session 36 RF & Wireless
A 0.29pJ/b 5.27Tb/s/mm UCIe Advanced Package Link in 3nm FinFET with 2.5D CoWoS Packaging
Didem Turker Melek1, R. NavinKumar2, James Vandersand3, Pyare Sarkar2,
Prakash BS2, Adrian Leuciuc4, Kevin Geary5, Shaojun Ma1, Chirag Mukesh Mehta1, Basant Bothra2, Shashi Jain2, Pawan Sabharwal6, Ranjan Vaish1, Kirti Bhanushali3, Yutong Ding7, Craig Frost4, John Annunziata4, Krishanu Sadh
ISSCC 2025 Session 36 RF & Wireless
A 64Gb/s/wire 10.5Tb/s/mm/layer Single-Ended Simultaneous Bi-Directional Transceiver with Echo and Crosstalk Cancellation for a Die-to-Die Interface in 28nm CMOS
Zhifei Wang1, Zhiwen Huang1, Tianchen Ye1, Bingyi Ye2, Fangzhu Li1, Wei Wang1,3,
The development of artificial intelligence and high-performance computing has fueled the demand for increased edge density and reduced bit error rate (BER) in die-to-die interfaces. One approach to improving the edge den
Dunshan Yu1, Weixin Gai1,3 Peking University, Beijing, China East Chin
ISSCC 2025 Session 36 RF & Wireless
A 32Gb/s 10.5Tb/s/mm 0.6pJ/b UCIe-Compliant Low-Latency Interface in 3nm Featuring Matched-Delay for Dynamic Clock Gating calibration, and the clock is subsequently gated to save power during idle. The QEC, controlled digitally by an FSM, features chopping cancellation to eliminate DC offset and device mismatches. The DCC and QEC achieve less than 0.3% duty cycle error and 330fs quadrature phase error.
Mu-Shan Lin1, Chien-Chun Tsai1, Shenggao Li2, Wei-Chih Chen1,
Wen-Hung Huang1, Yu-Chi Chen1, Yu-Jie Huang1, Alan Drake3, Chin-Hua Wen1, Paul Ranucci3, Hsin-Hung Kuo1, Aidong Yin3, Shu-Chun Yang1, Farsheed Mahmoudi3, Han-Tzung Ke1, Chao-Chieh Li1, Nai-Chen Cheng1, Jimmy Wang4, Kevin
ISSCC 2025 Session 27 RF & Wireless
A BJT-Based Temperature Sensor with an 80fJ∙K2 Resolution FoM
Nandor G. Toth, Kofi A. A. Makinwa
BJT-based temperature sensors are widely used because they can achieve a high accuracy after applying a low-cost 1-point trim. In terms of energy efficiency, however, they are still outperformed by resistor-based sensors
TU Delft, Delft, The Netherlands
ISSCC 2025 Session 27 RF & Wireless
A Sub-1V 14b 5.8nW/Hz BW/Power-Scalable CT Sensor Interface with a Frequency-Controlled Current Source Achieving a 225× Scalable Range
Xinjie Wu1, Yuyan Liu2, Xiaopeng Yu1, Nick Nianxiong Tan2, Zhong Tang2
Vango Technologies, Hangzhou, China 1 2 Precision and energy-efficient sensor interfaces have always been needed in IoT applications. To digitize weak signals (tens of mVs), such as shunt-based current and biomedical sen
Zhejiang University, Hangzhou, China
ISSCC 2025 Session 27 RF & Wireless
A Voltage-Biased CMOS Hall Sensor with 1.0µT (3σ) Offset and a 60nT/√Hz Noise-Floor
Floris J. P. van Mourik1, Sining Pan2, Karen M. Dowling1, Kofi A. A. Makinwa1
Tsinghua University, Beijing, China 1 2 Hall sensors are the only CMOS devices capable of measuring DC magnetic fields and so they are used in a wide range of applications, such as in compasses and current sensors. In su
TU Delft, Delft, The Netherlands
ISSCC 2025 Session 27 RF & Wireless
A 3-Axis MEMS Gyroscope with 2.8ms Wake-Up Time Enabled by a 1.5µW Always-On Drive Loop
Longjie Zhong1, Jinwen Zhang1, Chengyue Li1, Ling Wang1, Mingsheng Zhong1,
mobile and wearable devices with human-machine interfaces for motion detection and indoor navigation [1-5]. In these applications, the always-on mode (i.e., standby or suspend mode) is required to support event-driven op
Kangkang Cai2, Ji Gao2, Tiegang Hu2, Zhangming Zhu1 Xidian University,
ISSCC 2024 Session 4 RF & Wireless
A Highly-Integrated 6-Phase Cell-Reused Digital Transmitter Using 1/3 Duty-Cycle LO Signals for Harmonic Rejection
Jiaxiang Li*1, Zimu Li*1, Yun Yin1, Changgu Yan1, Nan Qi2, Ming Liu1, Hongtao Xu1
technologies, it is desirable to completely digitize the transmitter, which yields reduced die area, highly efficient operation and direct interface to digital baseband. However, the ever-increasing data demand with compl
Fudan University, Shanghai, China Chinese Academy of Sciences, Beijing
ISSCC 2024 Session 4 RF & Wireless
A 43mm2 Fully Integrated Legacy Cellular and 5G FR1 RF Transceiver with 24RX/3TX Supporting Inter-Band 7CA/5CA 4×4 MIMO with 1K-QAM
Jeongyeol Bae, Sangsung Lee, Joonggeun Lee, Ikkyun Jo, Heesoo Kim,
Kyunghyun Yoon, Taejong Kim, Jiyoung Lee, Myunghun Lee, Jaeseung Lee, Jongmin Jeong, Sungjun Lee, Taewan Kim, Sungjoo Kim, Gwangsik Cho, Duksoo Kim, Sangyun Lee, Pilsung Jang, Euibong Yang, Jeongmin Song, Gwangchun Park,