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ISSCC 2026Session 20 · RF TRANSCEIVER SUBSYSTEMS FROM CM-WAVE TO THZRF & Wireless22nm FDSOI CMOS

A High Back-off Efficiency Unequal-Stacked Doherty Power Amplifier Achieving 16.7dBm Pavg in a 22nm FDSOI CMOS Technology for 5G FR2 Applications

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📋 论文概要

提出一种非均衡堆叠的Doherty功率放大器,载波放大器采用共源拓扑,峰值放大器采用N堆叠拓扑,通过理论确定的四分之一波长线提高回退效率。在24-28GHz频段实现5G NR 64-QAM OFDM 100MHz信号下平均功率超过15.8dBm,平均PAE超过16.9%。

💡 主要创新点

核心指标
Pavg 16.7dBm,PAEavg 16.9%,EVM -25dB
工艺节点
22nm FDSOI CMOS
重要性
发表年份
ISSCC 2026

🏷 关键词

Doherty功率放大器非均衡堆叠回退效率毫米波22nm FDSOI

📄 原文摘要

Abstract This paper proposes an unequal-stacked Doherty power amplifier. The proposed Doherty structure consists of a common-source topology for the carrier amplifier and an N-stacked topology for the peaking amplifier with a theoretically determined quarter-wave line. Thanks to the proposed Doherty structure, the back-off efficiency is enhanced. With a 5G NR 64-QAM OFDM 100MHz signal, the Pavg and PAEavg exceed 15.8dBm and 16.9%, respectively, from 24 to 28GHz with the EVM of -25dB. Phase arrays are essential for millimeter-wave (mm-wave) cellular systems, enabling high equivalent isotropic radiated power (EIRP) for wide coverage. Since a significant number of power amplifiers (PAs) are integrated into a phased-array IC, it is crucial that these PAs are compact, highly efficient, and have high output power to minimize overall power consumption and chip area [1]. Numerous studies have been reported on these aspects

👥 作者与机构

Seungwon Park, Jooseok Lee, Seungjae Baek, Taewan Kim, Yifei Chen, Sehyug Jeon, Sung-gi Yang

Samsung Electronics, Seoul, Korea

分类:RF & Wireless · 年份:ISSCC 2026