A 0.6V 625um2 Fully Stacked RC-Based Temperature Sensor Using Low TCR Metal Resistor Achieving 0.017nJ·%2-Accuracy FoM in 2nm Gate-All-Around Process

📋 论文概要

本文提出一种基于RC的温度传感器，采用2nm gate-all-around工艺，通过完全堆叠低TCR金属电阻和环形振荡器时间数字转换器（TDC）来最小化硅面积（625μm²）。采用时间偏移压缩技术克服低TCR金属电阻的缺点，在-40~125°C范围内实现±0.5°C（3σ）的精度和12μs的转换时间，精度FoM达到0.017nJ·%²。

💡 主要创新点

• 完全堆叠低TCR金属电阻与环形振荡器TDC，实现625μm²的超小面积。
• 提出时间偏移压缩技术，在12μs转换时间内保持高精度，克服低TCR金属电阻的响应速度限制。
• 首次在2nm GAA工艺上实现高集成、低能耗的温度传感器，适应先进技术节点需求。

🏷 关键词

📄 原文摘要

Abstract The proposed RC-based temperature sensor, fabricated on a 2nm gate-all-around process, minimizes silicon area by fully stacking low temperature coefficient of resistance (TCR) metal resistors and a ring-oscillator time-to-digital converter. The conversion time is 12µs by using a time-offset compression technique to overcome the disadvantage of a low TCR metal resistor while having ±0.5°C (3σ) inaccuracy after 2-point calibration with a range of -40 to 125°C, resulting in accuracy-FoM of 0.017nJ·%2. As technology scaling continues to drive higher integration density and operating speed of SoCs, on-chip thermal management becomes essential. To provide effective thermal management, temperature sensors require high accuracy and fast conversion for optimizing chip performance, and a small size for placing sensors adjacent to on-chip hotspots. While traditional BJT-based temperature sensors have been widely used for high accuracy [6,7],

👥 作者与机构

Haejung Choi, Jooseong Kim, Woojoong Jung, Sungmin Yoo, Jun-Hyeok Yang, Sunghyuck Lee, Jihye Park, Michael Choi, Ben Rhew

Samsung Electronics, Yongin, Korea