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本文提出一种基于共栅双向放大器的超紧凑D波段收发前端,采用45nm RFSOI工艺,面向面积受限的二维波束成形天线封装。通过开关无对称级间匹配网络和可重配置输入/输出网络,实现了TX峰值饱和功率11.2dBm@135GHz,接收平均噪声系数8.2dB@129-145GHz,有源面积仅0.08mm²。
Abstract An ultra-compact D-band transceiver based on a common-gate bi-directional amplifier is presented in a 45nm RFSOI process for an area-constrained 2D beamformer antenna-inpackage. By employing a switchless symmetric inter-stage matching network and compact, low-loss reconfigurable input/output networks, the transceiver front-end achieves a TX peak Psat of 11.2dBm at 135GHz and an average RX NF of 8.2dB over 129 to 145GHz. The active chip area, excluding pads, is only 0.08mm2. The continuous growth in demand for wireless data necessitates the utilization of the Dband spectrum (110 to 170GHz). However, the limited transistor performance of silicon-based RFICs and the severe path loss at such high frequencies require the development of large-scale D-band phased arrays. For a compact phased-array transceiver module, the transmitter (TX) and receiver (RX) circuits can share an antenna, typically
Syed Mohammad Ashab Uddin1,2, Wooram Lee1
Pennsylvania State University, University Park, PA, 2Texas Instruments, Dallas, TX