A -82.3dB THD+N 60V Fully Integrated Shunt-Resistor-Based In-Line Current Sensor with DLL-Assisted Dynamic Body-Biasing Technique

📋 论文概要

本文提出了一种基于DLL辅助动态体偏置的电流传感器，解决了浮栅Gm电流传感器在高电压下因LDMOS体效应导致的线性度下降问题。通过动态偏置技术，实现了31dB的HD2改善和14dB的THD+N改善，峰值THD+N达到-82.3dB，支持60V共模电压和2MHz PWM抑制。该传感器适用于高功率音频和电机驱动系统。

💡 主要创新点

• 提出DLL辅助的动态体偏置技术，有效抑制LDMOS器件在高电压下的衬底电流体效应，提升线性度。
• 实现全集成基于分流电阻的内联电流传感器，支持60V共模和2MHz PWM共模电压抑制。
• 在0.18μm BCD工艺中实现，与现有方法相比显著改善HD2和THD+N性能。

🏷 关键词

📄 原文摘要

Abstract Floating-Gm-based current sensors are effective in rejecting PWM common-mode voltage. But their linearity drops at high voltages due to substrate-current-induced body effect in LDMOS devices. To address this issue, this work introduces a DLL-assisted dynamic body biasing sensor in 0.18µm BCD, improving HD2 by 31dB and THD+N by 14dB. And a peak THD+N of -82.3dB is achieved in the meanwhile. It supports 60V common-mode, rejects PWM up to 2MHz, and enables high-linearity sensing for high power audio and motor-driver systems. High-linearity current sensors are essential for high-performance audio systems and precision motor drivers, etc. In particular, in-line shunt-resistor-based current sensors are gaining popularity due to their potentially high linearity [1]. To achieve high power efficiency, such systems often rely on switched power stages—e.g., power inverters or Class-D amplifiers—, controlled by pulse-width-modulated (PWM) signals to drive the load. The

👥 作者与机构

Heng Ma, Huajun Zhang, Qinwen Fan

TU Delft, Delft, The Netherlands