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ISSCC 2008Session 11 · OPTICAL COMMUNICATIONWireline I/O0.18µm CMOS

A 10Gb/s Laser-Diode Driver with Active BackTermination in 0.18µm CMOS

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📋 论文概要

该论文提出了一种采用有源背端接技术的10Gb/s激光二极管驱动器(LDD),以解决传统无源背端接电阻导致调制电流范围显著下降的问题。通过在0.18µm CMOS工艺中实现有源背端接,有效吸收信号反射并提高波形保真度。

💡 主要创新点

核心指标
10Gb/s
工艺节点
0.18µm CMOS
重要性
发表年份
ISSCC 2008

🏷 关键词

激光二极管驱动器有源背端接10Gb/s

📄 原文摘要

A laser-diode driver (LDD) requires output transmission-line back-termination that absorbs signal reflection from the imperfectly terminated load, especially when a low-cost laser diode is used to build a high-speed optical transmitter. Otherwise, it may lead to degraded waveform fidelity and reduced eye-mask margin. Conventional LDDs implement the passive back-termination with on-chip resistors due to its simplicity [1]. However, the passive termination resistor inevitably becomes an additional load for the output driver, which results in significant decrease of the modulation current range. To overcome the reduced modulation current range, various design topologies of active back-termination have been proposed and successfully demonstrated for LDDs fabricated in GaAs or SiGe bipolar processes in the past few years [2, 3]. The design topology in [2] uses a unity-gain voltage buffer to achieve the active back-termination. A source or

👥 作者与机构

Chia-Ming Tsai, Mao-Cheng Chiu

National Chiao Tung University, Hsinchu, Taiwan

分类:Wireline I/O · 年份:ISSCC 2008