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ISSCC 2008Session 17 · WIDEBAND RECEIVERSOther65nm CMOS

A Wideband Balun LNA I/Q-Mixer combination in 65nm CMOS

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📋 论文概要

本文提出了一种宽带宽巴伦LNA和I/Q混频器组合电路,在65nm CMOS工艺中实现,避免了片上电感的使用,解决了宽带宽接收机对高线性度的需求。该设计覆盖从几百MHz到6GHz的频率范围,适用于软件定义无线电和超宽带通信。

💡 主要创新点

工艺节点
65nm CMOS
重要性
发表年份
ISSCC 2008

🏷 关键词

宽带接收机巴伦LNAI/Q混频器无电感设计高线性度

📄 原文摘要

University of Twente, Enschede, Netherlands NXP Semiconductors, Eindhoven, Netherlands Wideband receivers are required for many applications including the upcoming software-defined radio (SDR) architectures and ultra-wideband communication standards [1-3]. These standards cover a frequency spectrum from a few hundred MHz up to 6GHz. Co-operability with other communication devices (e.g., cellular and WLAN) operating in the same spectrum is mandatory, setting especially stringent demands on the wideband linearity of such receivers. The use of area-consuming on-chip inductors must be avoided as the cost per area of modern CMOS processes is high. The receiver preferably has a single-ended RF-input, as this avoids the use of an external broadband balun and its accompanying losses. A 65nm CMOS inductor-less wideband LNAmixer topology is presented, merging a current commutating I/Qmixer with a noise canceling balun-LNA.

👥 作者与机构

Stephan Blaakmeer1, Eric Klumperink1, Domine Leenaerts2, Bram Nauta1, 1

分类:Other · 年份:ISSCC 2008