⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文提出了一种基于面内悬浮栅MOSFET的纳米位移测量方法，该方法与前端CMOS工艺兼容，实现了高灵敏度、低功耗的纳米机电系统(NEMS)检测。
L. Duraffourg1, E. Ollier1, F. Casset1, P. Ancey2, L. Buchaillot3, A. M. Ionescu4 1 CEA-LETI, Grenoble, France, 2STMicroelectronics, Crolles, France IEMN, Villeneuve d’Ascq, France, 4EPFL, Lausanne, Switzerland 3 Nano-electromechanical-system (NEMS) devices are emerging as a new field of interest because they can simultaneously offer compatibility with CMOS co-integration and also specific advantages such as the potential for ultra-miniature size elements, low power consumption, and size-related advantages such as high resonant frequencies and enhanced detection sensitivity. NEMS exhibit a multitude of applications such as low-pass sensors (accelerometer, etc.), resonant sensors (mass sensor, etc.), or even clock time reference [1]. Previous works have demonstrated the feasibility of integrating on the same die a CMOS circuit and a NEMS using a postprocessing front-end [2]. The main disadvantage of the approach is
E. Colinet1, C. Durand23, P. Audebert1, P. Renaux1, D. Mercier1,