⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文提出了一种超薄CMOS芯片在柔性衬底上的集成技术，以替代传统研磨减薄方法，解决其不可靠和成本高的问题。通过后处理将标准CMOS芯片减薄至几十微米并转移到柔性箔片上，实现了高性能柔性电子器件。
thin-film-transistors on foil and ultra-thin chips on foil are technologies currently pursued to support the strongly emerging market for flexible electronics. Ultra-thin CMOS chips [1] on foil will not only provide solutions whenever high circuit performance and/or complexity are required but also in a heterogeneous integration with organic or TFT electronic components on foil, such as for flexible displays. Thinning of conventional CMOS chips in post-processing tends to be unreliable and costly due to difficulties in the control of the grinding process applied to fully processed CMOS wafers [2] or the need of employing expensive silicon-on-insulator (SOI) and handle substrates
Horst Rempp, Joachim Burghartz, Christine Harendt, Nicoleta Pricopi,
Marcus Pritschow, Christian Reuter, Harald Richter, Inge Schindler, Martin Zimmermann Institute for Microelectronics, Stuttgart, Germany Plastic electronics,