A High-Density 45nm SRAM Using Small-Signal Non-Strobed Regenerative Sensing

📋 论文概要

该论文提出了一种采用小信号非选通再生感测放大器(NSR-SA)的高密度45nm SRAM，解决了小尺寸器件变异性导致的读取电流和读SNM退化问题，以及传统感测放大器的失调电压和选通时序不确定性。通过0.25μm²的位单元和偏移补偿技术，实现了高密度与可靠读取。

💡 主要创新点

• 提出非选通再生感测放大器(NSR-SA)，通过偏移补偿消除失调电压影响，无需选通信号，降低时序不确定性。
• 在45nm低功耗工艺下实现0.25μm²高密度位单元，同时兼顾读取电流和读静态噪声容限(SNM)。

🏷 关键词

📄 原文摘要

High-density SRAMs are a primary contributor to the dramatic cost reductions and expanding features of ICs every technology node. Unfortunately, their small bit-cell devices have large variation, and the ensuing degradation in both IREAD and read SNM must be addressed simultaneously. In addition, variation severely affects sense-amplifier (SA) performance, as offset voltage and strobe timing uncertainty are dominating limitations. In this work, an SRAM in low-power 45nm CMOS is composed of 0.25μm2 bitcells and uses an offset-compensating non-strobed regenerative sense-amplifier (NSR-SA); this eliminates the need to insert timing margin for variation and tracking errors in the strobe signal, and it achieves higher sensitivity than conventional SAs, allowing read SNM to be optimized at the cost of IREAD. Figure 21.3.1 underlines the trade-offs plaguing high-density SRAMs. The scatter plot shows an inverse correlation between

👥 作者与机构

Naveen Verma, Anantha P. Chandrakasan

Massachusetts Institute of Technology, Cambridge, MA