A Single-Power-Supply 0.7V 1GHz 45nm SRAM with An Asymmetrical Unit-β-ratio Memory Cell

📋 论文概要

本文提出一种采用非对称单元β比6T存储单元的单电源供电64kB SRAM，在45nm bulk CMOS工艺下实现0.7V供电、1GHz操作。通过细粒度位线分段架构和非对称单元设计，解决了低电压下高速SRAM的面积和性能折衷问题，相比传统对称单元节省22%面积。

💡 主要创新点

• 提出非对称单元β比6T存储单元，在保持读写稳定性的同时节省22%面积。
• 采用细粒度位线分段架构，实现0.7V低电压下1GHz高速操作。
• 单电源供电设计，无需额外升压电路，降低系统复杂度。

🏷 关键词

📄 原文摘要

A. Tohata2, T. Sasaki1, A. Katayama1, G. Fukano1, Y. Fujimura1, N. Otsuka1 1 Toshiba Semiconductor, Kawasaki, Japan Toshiba Microelectronics, Kawasaki, Japan 2 A single-power supply 64kB SRAM is fabricated in a 45nm bulk CMOS technology. The SRAM operates at 1GHz with a 0.7V supply using a fine-grained bitline segmentation architecture and with an asymmetrical unit-β-ratio 6T cell. With the asymmetrical cell, we save 22% cell area compared to a conventional symmetrical cell. This bulk SRAM is designed for GHz-class sub-1V operation (Fig. 21.4.1). Low-voltage SRAM is one of the most important components of low-power mobile products, such as cell phones and mobile game machines, which often process large amounts of data. This creates demand for high-performance SRAM that supports low-voltage operation. However, ensuring the functionality and performance of SRAM is becoming more difficult because of the larger characteristic variability on cell transistors caused by technology scaling.

👥 作者与机构

A. Kawasumi1, T. Yabe1, Y. Takeyama1, O. Hirabayashi1, K. Kushida1,