Compact In-Situ Sensors for Monitoring NegativeBias-Temperature-Instability Effect and Oxide Degradation

📋 论文概要

该论文提出了一种紧凑型原位传感器，用于同时监测负偏置温度不稳定性（NBTI）效应和氧化物退化，以解决先进工艺下器件可靠性问题。通过片上实时监测，为动态电压/频率调节系统提供反馈，从而缓解老化引起的性能衰退。

💡 主要创新点

• 提出一种紧凑型原位传感器结构，能够同时检测NBTI导致的阈值电压漂移和氧化物击穿退化
• 传感器面积小、功耗低，适合集成到大规模数字系统中，支持在线可靠性监测

🏷 关键词

📄 原文摘要

Semiconductor reliability is a growing issue as device critical dimensions shrink and integration levels continue to grow at a rapid pace. Aggressive oxide thickness scaling has led to large vertical electric fields in MOSFET devices where oxide breakdown is a critical issue. The high field also leads to significant thresholdvoltage shift over time due to the negative-bias temperature-instability (NBTI) effect, creating additional uncertainty in device behavior over time. Proposed dynamic control systems that modify the voltage, sleep state, and workload of components of large systems [1,2] further complicate a priori reliability qualification and call for on-chip structures for real-time estimation of various reliability mechanisms [3,4]. The NBTI sensor proposed in [4] is intended to be used for general NBTI characterization and not insitu monitoring of degradation, due to large area overhead (~450×

👥 作者与机构

E. Karl, P. Singh, D. Blaauw, D. Sylvester

University of Michigan, Ann Arbor, MI