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ISSCC 2008Session 22 · VARIATION COMPENSATION & MEASUREMENTOther

1200µm2 Physical Random-Number Generators Based on SiN MOSFET for Secure Smart-Card Application

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📋 论文概要

该论文提出一种面积仅1200µm²的物理随机数生成器,基于SiN MOSFET实现,适用于安全智能卡应用。通过利用SiN MOSFET的随机噪声特性,在极小面积内生成不可预测的随机数,解决了传统物理随机数生成器面积过大的问题。

💡 主要创新点

核心指标
面积1200µm²
重要性
发表年份
ISSCC 2008

🏷 关键词

物理随机数生成器SiN MOSFET智能卡安全面积优化

📄 原文摘要

financial transactions and the transfer of confidential information. Small circuits for high-level information security have to be implemented in these chips. These secure circuits thus require a small ph-RNG (physical random-number generator) capable of generating unpredictable random numbers. A smart card of just a few mm2 is almost entirely occupied by the CPU, coprocessor, random logic, ROM, RAM, EEPROM, etc., and the memory capacity required is increasing. However, the circuit area of previous ph-RNGs is large, since there is a complex trade-off among circuit area, quality of random numbers and data generation rate. To solve the tradeoff, we use SiN MOSFET as a noise source device, and design a compact A/D converter for SiN MOSFET RNG. Together these components form a compact ph-RNG

👥 作者与机构

Mari Matsumoto, Shinichi Yasuda, Ryuji Ohba, Kazutaka Ikegami,

Tetsufumi Tanamoto, Shinobu Fujita Toshiba, Kawasaki, Japan Secure digital chips such as those found in smart cards are widely used for

分类:Other · 年份:ISSCC 2008