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本文提出了一款4位/单元、8Gb的NROM数据存储存储器，通过增强写入性能来满足数据存储应用的低成本需求。该设计在单元尺寸缩小和每个单元存储更多比特之间取得了平衡，同时保持了足够的写入速度。
Kobi Danon1, Yair Sofer1, Yoram Betser1, Amichai Givant1, Alexander Kushnarenko1, Yaal Horesh1, Ron Eliyahu1, Eduardo Maayan1, Boaz Eitan1, Wang Pei Jen2, Yan Feng2, Lin Ching Yao2, Kwon Yi Jin2, Kwon Sung Woo2, Cai En Jing2, Yi Jing Jing2, Kim Jong Oh2, Yi Guan Jiun2 Saifun Semiconductors, Netanya, Israel, 2SMIC. Shanghai, China 1 The increasing demand for cost reduction of data storage solutions calls for both cell-size shrink, as well as compressing more bits of data into the storage element. Yet the low cost solution is required to have fast enough write operation to fit density-hungry applications. We present an 8Gb data flash storage device based on 4b/cell NROM technology. A major improvement in write time is accomplished through improvement of programming techniques, erase scheme and sensing methods. A key issue in multi-bit design is to accurately place the four distributions, and still maintain a fast enough program performance. The
Ran Sahar1, Avi Lavan1, Eran Geyari1, Amit Berman1, Itzic Cohen1, Ori Tirosh1,