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本文提出了一种采用双极选择晶体管的多级单元相变存储器（PCM），旨在解决传统存储器在非易失性、随机存取和快速读取性能上的统一问题。通过优化单元结构和编程策略，实现了多级存储能力，提升了存储密度和性能。
Donze1, Meenatchi Jagasivamani2, Egidio Buda1, Fabio Pellizzer1, David Chow2, Alessandro Cabrini4, Giacomo Matteo Angelo Calvi4, Roberto Faravelli4, Andrea Fantini4, Guido Torelli4, Duane Mills2, Roberto Gastaldi1, Giulio Casagrande1 1 STMicroelectronics, Agrate, Italy, 2Intel, Folsom, CA STMicroelectronics, Pavia, Italy, 4University of Pavia, Pavia, Italy 3 Phase-change memory (PCM) is becoming widely recognized as the most likely candidate to unify the many memory technologies that exist today [1-9]. The combination of non-volatile attributes of Flash, RAM-like bit-alterability, and fast reads and writes position PCM to enable changes in the memory subsystems of cellular phones, PCs and countless embedded and consumer electronics applications. This design’s multi-level cell (MLC) capabilities combined with longterm scalability reduce PCM costs as only realized before by hard disk drives. MLC technology is challenged with fitting more cell
Ferdinando Bedeschi1, Rich Fackenthal2, Claudio Resta3, Enzo Michele