⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文提出了一种采用56nm工艺的16Gb 3位/单元NAND闪存，实现了8MB/s的写速率，解决了高密度存储与写性能之间的平衡问题。
Tapan Samaddar1, Hao Nguyen1, Man Mui1, Khin Htoo1, Teruhiko Kamei1, Masaaki Higashitani1, Emilio Yero1, Gyuwan Kwon1, Phil Kliza1, Jun Wan1, Tetsuya Kaneko2, Hiroshi Maejima2, Hitoshi Shiga2, Makoto Hamada2, Norihiro Fujita2, Kazunori Kanebako2, Eugene Tam1, Anne Koh1, Iris Lu1, Calvin Kuo1, Trung Pham1, Jonathan Huynh1, Qui Nguyen1, Hardwell Chibvongodze1, Mitsuyuki Watanabe1, Ken Oowada1, Grishma Shah1, Byungki Woo1, Ray Gao1, James Chan1, James Lan1, Patrick Hong1, Liping Peng1, Debi Das1, Dhritiman Ghosh1, Vivek Kalluru1, Sanjay Kulkarni1, Raul Cernea1, Sharon Huynh1, Dimitris Pantelakis1, Chi-Ming Wang1, Khandker Quader1 SanDisk, Milpitas, CA, 2Toshiba Semiconductor, Yokohama, Japan 1 As the market demands higher density and cheaper flash memory for applications such as MP3 players, cellular phones, digital cameras, SSD, and video camcorders, multi-bit per cell flash memories are becoming increasingly important. Today, mainstream products
Yan Li1, Seungpil Lee1, Yupin Fong1, Feng Pan1, Tien-Chien Kuo1, Jong Park1,