Low-Crosstalk and Low-Dark-Current CMOS Image-Sensor Technology Using a Hole-Based Detector

📋 论文概要

该论文提出了一种基于空穴探测器的CMOS图像传感器技术，旨在解决像素尺寸缩小带来的串扰和暗电流问题。通过采用空穴基探测器结构，有效降低了串扰和暗电流，提升了图像质量。

💡 主要创新点

• 采用空穴基探测器替代传统电子基探测器，从物理机制上减少串扰。
• 通过优化探测器结构和工艺，显著降低暗电流，改善低光照性能。

🏷 关键词

📄 原文摘要

Jeffery Kyan1, Christopher Parks1, Gang Shi1, Cristian Tivarus1, Jian Wu1 1 Eastman Kodak, Rochester, NY, 2Eastman Kodak, Yokohama, Japan As the pixel size of CMOS image sensors (CIS) shrink, problems associated with crosstalk become more severe for devices built using mainstream CMOS processing. This high crosstalk increases the amount of noise added to the final image (via an increase of the off-diagonal terms in the color correction matrix (CCM)) and degrades the modulation transfer function (MTF). Reducing dark current has also been challenging for such CIS imagers. At present, the solution to these problems has been to switch to n-type substrates [1, 2] since they have been used for interline charge-coupled devices (CCDs) for decades [3]. This technique is well known for reducing the lateral diffusion component of crosstalk. The downside of this approach for CIS devices is that it requires major modifications to the process and existing

👥 作者与机构

Eric Stevens1, Hirofumi Komori2, Hung Doan1, Hiroaki Fujita1,