TX and RX Front-Ends for 60GHz Band in 90nm Standard Bulk CMOS CMOS PA performance even at a low drain voltage of 1.0V or less [3, 4, 7].

📋 论文概要

本文提出了采用90nm标准体CMOS工艺的60GHz频段发射机和接收机前端芯片，采用直接变频架构以实现芯片小型化和宽带宽操作。解决了毫米波频段高速多千兆无线收发器的前端集成问题。

💡 主要创新点

• 首次在90nm标准体CMOS中实现了60GHz频段的直接变频收发前端，包括PA、VGA、I/Q调制器/解调器等模块的集成。
• 功率放大器在1.0V低漏极电压下仍能保持良好性能，适用于低功耗毫米波应用。

🏷 关键词

📄 原文摘要

Masaharu Ito2, Naoyuki Orihashi2, Kenichi Maruhashi2, Hidenori Shimawaki1 The block diagrams of the transmitter and receiver front-ends are shown in Fig. 31.1.4. The direct-conversion configuration is adopted for chip miniaturization and wider bandwidth operation. The transmitter is composed of a PA, a variable-gain amplifier (VGA), an I/Q modulator (I/Q MOD) and a driver amplifier (DA). The receiver consists of two low-noise amplifiers (LNAs) in series, a VGA, an I/Q demodulator (I/Q DEMOD), and a DA. 31.1 1 NEC, Otsu, Japan, 2NEC, Kawasaki, Japan High-speed multi-gigabit wireless transceivers operating in the unlicensed 60GHz-band are expected to be realized in a CMOS technology for low-cost personal applications. Recently, several CMOS receivers have been reported at this frequency band [1, 2]. A CMOS transceiver has also been demonstrated that provides an output power of −2dBm without a power amplifier (PA) [3].

👥 作者与机构

Masahiro Tanomura1, Yasuhiro Hamada2, Shuya Kishimoto2,