A 60GHz 1V +12.3dBm Transformer-Coupled Wideband PA in 90nm CMOS

📋 论文概要

本文展示了一款全集成60GHz变压器耦合两级差分功率放大器，采用90nm数字CMOS工艺，实现单端输入输出。该设计利用变压器耦合替代传统大尺寸传输线，显著减小芯片面积并降低衬底损耗，在1V电源下达到+12.3dBm输出功率。

💡 主要创新点

• 采用变压器耦合代替传统传输线，实现紧凑的毫米波功率放大器设计，减小芯片面积并降低损耗。
• 两级差分结构配合单端输入输出，在60GHz频段实现宽带高输出功率。

🏷 关键词

📄 原文摘要

The opening up of the mm-wave band has created opportunities for high-data-rate communication, radar and medical imaging. The cost and size advantages of CMOS have motivated research on 60GHz CMOS front-end design [1]. However, very few CMOS mmwave power amplifiers (PAs) have been reported so far. Furthermore, most of the mm-wave PAs reported use bulky transmission lines [2, 3], increasing silicon area and incurring higher substrate losses. We demonstrate a fully integrated 60GHz transformer-coupled two-stage differential power amplifier with single-ended input and output in 90nm digital CMOS with no RF process options. This work uses on-chip transformers for a 60GHz PA as an integrated CMOS solution. Operating from a 1V supply, it achieves a 1dB compressed output power of +9dBm and saturated power of +12.3dBm. The chip occupies an area of only 660×380µm2 by taking advantage of the extensive use of small transformers.

👥 作者与机构

Debopriyo Chowdhury, Patrick Reynaert, Ali M. Niknejad

University of California, Berkeley, CA