60 and 77GHz Power Amplifiers in Standard 90nm CMOS

📋 论文概要

该论文在标准90nm CMOS中实现了60GHz和77GHz功率放大器，解决了毫米波应用中由于晶体管低击穿电压和硅衬底损耗导致的PA集成难题。

💡 主要创新点

• 首次在标准90nm CMOS中同时实现60GHz和77GHz功率放大器，突破了毫米波PA集成的瓶颈。
• 通过优化电路设计和匹配网络，克服了高频下衬底损耗和低击穿电压的限制。

🏷 关键词

📄 原文摘要

frequency mm-wave applications such as short-range communications (60GHz band) [1, 2] and automotive radar (77GHz band) [3]. The power amplifier (PA) is one of the most challenging blocks in the transmitter due to the low breakdown voltages of transistors and the loss in monolithic matching networks that are built on silicon substrate. Therefore, only one 60GHz PA [4] (and no 77GHz PA) in CMOS has been reported. PA integration is the biggest barrier to developing fully integrated CMOS transceivers. This paper describes the implementation of 60 and 77GHz PAs in standard 90nm CMOS technology. An accurate transistor model is developed that enables designing circuits operating at frequencies up to 80GHz. The circuits are designed with a unique matching topology for reducing the RF signal loss in matching

👥 作者与机构

Toshihide Suzuki, Yoichi Kawano, Masaru Sato, Tatsuya Hirose, Kazukiyo Joshin

Fujitsu Laboratories, Atsugi, Japan Recent advances in CMOS technology are enabling CMOS implementations of higher