A BiCMOS Operational Amplifier Achieving 0.33µV/°C Offset Drift using Room-Temperature Trimming

📋 论文概要

本文提出了一种采用BiCMOS工艺的运算放大器，通过室温微调技术实现了仅0.33µV/°C的失调电压漂移。该设计利用PTAT和带隙微调电路，在室温下修调即可在整个温度范围内保持低漂移，解决了传统运放需要高温修调或低温漂设计的难题。

💡 主要创新点

• 提出了一种基于室温修调的PTAT和带隙微调技术，无需高温测试即可实现极低的失调漂移。
• 通过可编程带隙电压输入到附加缩放输入对，利用跨导比实现精细的输入参考微调，分辨率为30µV。
• 将PTAT微调通过调整负载电阻实现，同时结合带隙微调，两种微调电路协同工作以补偿温度漂移。

🏷 关键词

📄 原文摘要

Johan H. Huijsing1, Kofi A. A. Makinwa1 Delft University of Technology, Delft, Netherlands National Semiconductor, Delft, Netherlands A detailed circuit diagram of the input stage is shown in Fig. 3.6.2. The PTAT trimming is implemented by adjusting the load resistors. The bandgap trimming is implemented by generating a programmable bandgap voltage Vtrim at the input of an additional scaled input pair. This voltage is referred to the input by the gm ratio (α = 12) of the differential pairs. The resolution of both trimming circuits is 30μV. 1 2 Operational amplifiers (opamps) with MOS inputs are attractive for applications in which a low input current is required, such as high-impedance sensor interfaces. Opamps with MOS input stages, however, typically exhibit much higher input offset voltages and drifts than their bipolar or JFET counterparts. Dynamic offset cancellation (DOC) techniques can be used to reduce offset

👥 作者与机构

Muhammed Bolatkale1, Michiel A. P. Pertijs2, Wilko J. Kindt2,