Migration of Cell Broadband EngineTM from 65nm SOI to 45nm SOI

📋 论文概要

本文介绍了将Cell宽带引擎从65nm SOI工艺迁移到45nm SOI工艺的过程，主要目标是确保游戏应用在45nm节点下仍能保持与65nm和90nm设计相同的运行频率。通过采用优化的电路设计和工艺技术，成功实现了性能的平滑迁移。

💡 主要创新点

• 针对45nm SOI工艺设计了保持原有频率的电路架构，解决了先进工艺下性能随频率降低的挑战。
• 提出了有效的迁移策略，包括对关键路径的优化和功耗管理，确保在高频率下稳定工作。

🏷 关键词

📄 原文摘要

S. R. Cottier1, P. Coulman1, J. Culp3, G. Gervais1, M. S. Gray4, Y. Itaka5, C. J. Johnson2, F. Kono5, L. Maurice1, K. W. McCullen4, L. Nguyen1, Y. Nishino6, H. Noro5, J. Pille7, M. Riley1, M. Shen1, C. Takano6, S. Tokito6, T. Wagner3, H. Yoshihara6 IBM, Austin TX, 2IBM, Rochester, MN, 3IBM, Hopewell Junction, NY, IBM, Essex Junction, VT, 5Toshiba America Electronic Components, Austin, TX 6 Sony Computer Entertainment of America, Austin, TX, 7 IBM, Boeblingen, Germany Since gaming applications require the 45nm Cell BE to operate at the same frequency as the 65nm and 90nm designs, we use the device performance improvements in 45nm to reduce chip power by lowering VDD. The 65nm Cell BE operates at VDD=0.9V. Figure 4.3.3 shows the relative FO4 delay in 45nm at various VDD with respect to that of 65nm at VDD=0.9V. The equivalent delay is maintained by lowering VDD by roughly 100mV. Hence, this

👥 作者与机构

O. Takahashi1, C. Adams2, D. Ault1, E. Behnen1, O. Chiang1,