A 2kV ESD-Protected 18GHz LNA with 4dB NF in 0.13µm CMOS

📋 论文概要

该论文在0.13µm CMOS工艺上设计了一款18GHz低噪声放大器，集成了2kV ESD保护，实现了4dB的噪声系数。解决了高频段无线通信中对ESD保护和低噪声性能的需求。

💡 主要创新点

• 在0.13µm CMOS工艺中成功实现了18GHz的LNA设计，并集成了2kV的ESD保护电路。
• 实现了4dB的低噪声系数，同时保持了良好的增益和线性度。

🏷 关键词

📄 原文摘要

10GHz is becoming extremely crowded alternative higher frequency bands are getting a large attention despite their associated high dispersion losses and need for a direct line-of-sight. Recently, numerous published work have targeted the free spectrum at 60GHz, but near-future commercial applications may prefer the frequency bands at 17 to 17.2GHz (ETSI) and/or 24 to 24.2GHz (ISM band) to enable the use of cheap package options (VQFN or flip-chip), and classical board- and antenna-mounting techniques. As already seen in cellular applications, pure CMOS SoC solutions are preferred to enable the lowest bill of materials. With this background, in this work a minimal area CMOS LNA aiming at the above-mentioned frequency bands is presented. To be as successful

👥 作者与机构

Yiqun Cao1, Vadim Issakov2, Marc Tiebout3, 1

Infineon Technologies, Munich, Germany University Paderborn, Paderborn, Germany 3 Infineon Technologies, Villach, Austria 2 As the frequency spectrum below