⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文提出了一种采用内部反馈技术的宽带分布式放大器，在90nm CMOS工艺中实现了660GHz的增益带宽积。解决了传统分布式放大器增益与带宽折衷的问题，适用于高速链路、宽带无线电收发器和高分辨率雷达成像系统。
Wideband circuits find applications in various fields such as highspeed links, broadband radio transceivers, high-resolution radar and imaging systems. Recently, distributed amplifiers (DAs) with large bandwidths have been reported in bulk CMOS and SOI technologies. For example, [1] reports a DA with a peak gain of 7.4dB and the 3dB bandwidth (BW) of 80GHz while [2] reports 11dB of gain using SOI technology providing BW of 90GHz. Others have also reported high BW DAs in CMOS [3-5]. In [6] the authors have used cascaded stages and inductors with stagger tuning to extend the gain. However, this method sacrifices the robustness of the DA design and makes it vulnerable to process variations and modeling errors. Also, the number of synthesized transmission-line elements at the input being limited, input matching degrades and the noise contribution from the input termination resistor increases.
Amin Arbabian, Ali M. Niknejad
University of California, Berkeley, CA