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该论文提出了一种采用正负反馈技术的差分共栅CMOS低噪声放大器(LNA),解决了传统共栅LNA在增益、噪声系数与输入阻抗匹配之间的折中问题。通过正负反馈结构,在3.6mW低功耗下实现了优越的带宽、线性度、稳定性和对PVT变化的鲁棒性。
features superior bandwidth, linearity, stability, and robustness to PVT variations compared to a common-source (CS) topology [1]. In spite of these advantages, the dependence of gain and NF on the restricted transconductance (gm) renders this topology unsuitable for various wireless applications. The input impedance of a CG LNA is simplified as 1/gm, and the noise factor is inversely proportional to gm [2]. In order to achieve high gain and low NF, gm should be increased, which deteriorates the 50Ω input impedance matching for a conventional CG LNA. A capacitor-cross-coupled (CCC) negative feedback configuration has been addressed for gm boosting [3]. The architecture, utilizing an inverting gain A, boosts gm to (1+A)gm with an input impedance of 1/(1+A)gm. However, as A is
Sanghyun Woo1, Woonyun Kim1, Chang-Ho Lee2, Kyutae Lim1, Joy Laskar1
Georgia Institute of Technology, Atlanta, GA Samsung RFIC Design Center, Atlanta, GA 1 2 A common-gate (CG) LNA has been widely investigated because it