A Compact Low-Noise Amplifier in CMOS Weighted Distributed

📋 论文概要

该论文提出了一种加权分布式CMOS低噪声放大器（LNA），通过分布式结构打破传统LNA中输入晶体管电容与带宽之间的折衷，实现了紧凑设计且无需使用更高过驱动电压，从而提高了功率效率。

💡 主要创新点

• 提出加权分布式放大架构，在不增加功耗的前提下同时实现宽带宽和低噪声系数。
• 通过分布式结构分散输入电容，降低了对晶体管尺寸和过驱动电压的苛刻要求。

🏷 关键词

📄 原文摘要

The noise figure (NF) of a front-end low-noise amplifier (LNA) places a lower bound on the sensitivity of a receiver. In a conventional LNA, there is a tradeoff between the intrinsic input capacitance of the input transistors and the achievable bandwidth (BW) of the amplifier. This makes it necessary to use smaller transistors at higher gate overdrive voltages to simultaneously achieve greater BW and better NF. Unfortunately, biasing the transistor in this fashion yields a power-inefficient design. Furthermore, the need for a smaller capacitance presents a challenge to electrostatic discharge (ESD) protection of the input due to its added capacitance. One possible way to overcome this noise-bandwidth trade-off is to use distributed amplifiers (DA), where the input and output parasitic capacitances of the individual amplification stages are absorbed into a transmission line (T-line) and become part of its real impedance. In a standard DA, the output currents

👥 作者与机构

Yu-Jiu Wang, Ali Hajimiri

California Institute of Technology, Pasadena, CA