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ISSCC 2009Session 13 · FLASH MEMORYMemory

A 1.8V 30nJ Adaptive Program-Voltage (20V) Generator for 3D-Integrated NAND Flash SSD

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📋 论文概要

本文提出一种1.8V供电、能耗仅30nJ的自适应编程电压发生器,用于3D集成NAND Flash SSD。该发生器能在低功耗下产生20V编程电压,解决了传统SSD在低电压下高效产生高压编程电压的难题。

💡 主要创新点

核心指标
30nJ编程能耗,20V输出电压
重要性
发表年份
ISSCC 2009

🏷 关键词

NAND Flash固态硬盘编程电压发生器自适应3D集成

📄 原文摘要

SSDs. A typical SSD consists of more than 16 NAND Flash memories, DRAMs and a NAND controller. Since the NAND write performance is 10MB/s [1,2], to raise the write speed of SSD to the level of HDD, 100MB/s, 8 or more NAND chips in SSD are simultaneously programmed. As the feature size decreases, the total bitline capacitance in a chip increases beyond 200nF. If 8 or more NAND chips operate in parallel, a large current of 800mA flows to charge the bitline capacitance in a sub-30nm SSD [3]. A good strategy to decrease the power is lowering the supply voltage, VDD, from 3.3 to 1.8V. Yet, at 1.8V, the power consumption of conventional charge pumps, used to generate the 20V program voltage, VPGM, drastically increases and the total power consumption of the NAND does not

👥 作者与机构

Koichi Ishida1, Tadashi Yasufuku1, Shinji Miyamoto2, Hiroto Nakai2,

Makoto Takamiya1, Takayasu Sakurai1, Ken Takeuchi1 University of Tokyo, Tokyo, Japan Toshiba, Yokohama, Japan 1 2 Decreasing power consumption is the key design issue of

分类:Memory · 年份:ISSCC 2009