⚡ 本页包含 AI 生成的分析内容,仅供参考
本文提出一种1.8V供电、能耗仅30nJ的自适应编程电压发生器,用于3D集成NAND Flash SSD。该发生器能在低功耗下产生20V编程电压,解决了传统SSD在低电压下高效产生高压编程电压的难题。
SSDs. A typical SSD consists of more than 16 NAND Flash memories, DRAMs and a NAND controller. Since the NAND write performance is 10MB/s [1,2], to raise the write speed of SSD to the level of HDD, 100MB/s, 8 or more NAND chips in SSD are simultaneously programmed. As the feature size decreases, the total bitline capacitance in a chip increases beyond 200nF. If 8 or more NAND chips operate in parallel, a large current of 800mA flows to charge the bitline capacitance in a sub-30nm SSD [3]. A good strategy to decrease the power is lowering the supply voltage, VDD, from 3.3 to 1.8V. Yet, at 1.8V, the power consumption of conventional charge pumps, used to generate the 20V program voltage, VPGM, drastically increases and the total power consumption of the NAND does not
Koichi Ishida1, Tadashi Yasufuku1, Shinji Miyamoto2, Hiroto Nakai2,
Makoto Takamiya1, Takayasu Sakurai1, Ken Takeuchi1 University of Tokyo, Tokyo, Japan Toshiba, Yokohama, Japan 1 2 Decreasing power consumption is the key design issue of