⚡ 本页包含 AI 生成的分析内容，仅供参考
论文设计并实现了一款113mm²的32Gb 3位单元（3b/cell）NAND闪存芯片，通过多级存储技术大幅提升了存储密度，解决了高容量闪存芯片的面积效率和成本问题。
Shindo1, Toshiaki Edahiro1, Teruhiko Kamei2, Hiroaki Nasu2, Makoto Iwai1, Koji Kato1, Yasuyuki Fukuda1, Naoaki Kanagawa1, Naofumi Abiko1, Masahide Matsumoto2, Toshihiko Himeno1, Toshifumi Hashimoto1, Yi-Ching Liu2, Hardwell Chibvongodze2, Takamitsu Hori2, Manabu Sakai2, Hong Ding2, Yoshiaki Takeuchi1, Hitoshi Shiga1, Norifumi Kajimura1, Yasuyuki Kajitani1, Kiyofumi Sakurai1, Kosuke Yanagidaira1, Toshihiro Suzuki1, Yuko Namiki1, Tomofumi Fujimura1, Man Mui2, Hao Nguyen2, Seungpil Lee2, Alex Mak2, Jeffery Lutze2, Tooru Maruyama1, Toshiharu Watanabe1, Takahiko Hara1, Shigeo Ohshima1 Toshiba, Yokohama, Japan SanDisk, Milpitas, CA 1 2 NAND flash memories are used in digital still cameras, cellular phones, MP3 players and various memory cards. As seen in the growing needs for applications such as solid-state drives and video camcoders, the market demands for larger-capacity storage has continuously increased and NAND Flash memories
Takuya Futatsuyama1, Norihiro Fujita1, Naoya Tokiwa1, Yoshihiko