← 返回论文列表 📄 下载原文 PDF  ISSCC 2009 · 13.5
ISSCC 2009Session 13 · FLASH MEMORYMemory

A 2Gb/s 15pJ/b/chip Inductive-Coupling Programmable Bus for NAND Flash Memory Stacking

⚡ 本页包含 AI 生成的分析内容,仅供参考

📋 论文概要

本文提出了一种用于NAND Flash存储器堆叠的电感耦合可编程总线,通过无线接口实现控制器与64个堆叠芯片的随机访问,数据率达2Gb/s,功耗为15pJ/b/chip。该技术利用中继传输和去除静电保护器件,显著降低了功耗和I/O电路面积。

💡 主要创新点

核心指标
2Gb/s, 15pJ/b/chip
重要性
发表年份
ISSCC 2009

🏷 关键词

电感耦合NAND Flash堆叠固态硬盘无线接口中继传输

📄 原文摘要

communication technique, which enables a controller chip to communicate with random access with a stack underneath it of 64 NAND Flash memory chips at a data rate of 2Gb/s using relayed transmission is developed (Fig. 13.5.1). This technique can be applied to memory access in solid-state drives (SSD). The wireless interface allows the removal of a highly capacitive ESD protection device and results in a 2× reduction in power consumption, and a 40× reduction in I/O circuit-layout area. Using bonding wires for the power supply and wireless interface for data access reduces the number of bonding wires in the 64-chip stack from over 1,500 wires to less than 200 wires. This reduction in the number of bonding wires makes it possible to integrate 64 chips in one package, which conventionally requires

👥 作者与机构

Yasufumi Sugimori1, Yoshinori Kohama1, Mitsuko Saito1,

Yoichi Yoshida1, Noriyuki Miura1, Hiroki Ishikuro1, Takayasu Sakurai2, Tadahiro Kuroda1 Keio University, Yokohama, Japan, University of Tokyo, Tokyo, Japan 1 2 A wireless

分类:Memory · 年份:ISSCC 2009