A 5.6MB/s 64Gb 4b/Cell NAND Flash Memory in 43nm CMOS

📋 论文概要

本文介绍了一款采用43nm CMOS工艺的64Gb（8GB）4b/cell（QLC）NAND闪存芯片，实现了5.6MB/s的写入速度。该设计通过多比特存储技术大幅提升了存储密度，解决了大容量闪存中密度与性能的平衡问题。

💡 主要创新点

• 首次在43nm工艺节点实现4b/cell（QLC）NAND闪存，每单元存储4比特，显著提高存储密度。
• 通过优化的电路设计和工艺技术，在64Gb容量下达到5.6MB/s的写入速度，兼顾了高密度和合理性能。

🏷 关键词

📄 原文摘要

K. Isobe2, B. Le1, F. Moogat1, N. Mokhlesi1, K. Kozakai1, P. Hong1, T. Kamei1, K. Iwasa2, J. Nakai2, T. Shimizu2, M. Honma2, S. Sakai2, T. Kawaai2, S. Hoshi2, J. Yuh1, C. Hsu1, T. Tseng1, J. Li1, J. Hu1, M. Liu1, S. Khalid1, J. Chen1, M. Watanabe1, H. Lin1, J. Yang1, K. McKay1, K. Nguyen1, T. Pham1, Y. Matsuda2, K. Nakamura2, K. Kanebako2, S. Yoshikawa2, W. Igarashi2, A. Inoue2, T. Takahashi2, Y. Komatsu2, C. Suzuki2, K. Kanazawa2, M. Higashitani1, S. Lee1, T. Murai1, K. Nguyen1, J. Lan1, S. Huynh1, M. Murin1, M. Shlick1, M. Lasser1, R. Cernea1, M. Mofidi1, K. Schuegraf1, K. Quader1 SanDisk, Milpitas, CA Toshiba, Yokohama, Japan 1 2 Today NAND Flash memory is used for data and code storage in digital cameras, USB devices, cell phones, camcorders, and solid-state disk drives. Figure 13.6.1 shows the memory-density trend since 2003. To satisfy the market demand for lower cost per bit and higher density nonvolatile memory, in

👥 作者与机构

C. Trinh1, N. Shibata2, T. Nakano2, M. Ogawa2, J. Sato2, Y. Takeyama2,