A 300mV 494GOPS/W Reconfigurable Dual-Supply 4Way SIMD Vector Processing Accelerator in 45nm CMOS

📋 论文概要

该论文提出了一种在45nm CMOS工艺下实现的可重构双电源4路SIMD向量处理加速器，能够在300mV超低电压下工作，能效达到494GOPS/W，有效解决了移动处理器中高性能向量计算的功耗瓶颈问题。

💡 主要创新点

• 采用双电源供电方案，分别优化核心逻辑和存储单元的电压，降低功耗。
• 实现了4路SIMD可重构架构，支持多种向量运算模式，提高灵活性。
• 在300mV超低电压下实现494GOPS/W的高能效，适用于功耗受限的移动设备。

🏷 关键词

📄 原文摘要

Amit Agarwal, Ram K. Krishnamurthy, Shekhar Borkar Intel, Hillsboro, OR High-throughput parallel SIMD vector computations are the most performance and power-critical operations in multimedia, graphics and signal processing workloads. An array of SIMD vector processing engines delivers highthroughput short bit-width arithmetic operations on large data sets with orders of magnitude higher energy efficiencies vs. general-purpose cores [1, 2]. A reconfigurable 4-way SIMD engine targeted for on-die acceleration of vector processing in power-constrained mobile microprocessors is fabricated in 45nm High-K/Metal-gate CMOS [3]. The accelerator is reconfigured to perform 4-way 16b×16b multiplies, 32b×32b multiply, 4-way 16b additions, 2way 32b additions and 72b addition with single-cycle throughput and wide dynamic supply voltage range of operation (1.3V to 230mV). A reconfigurable 2×2 tile of signed 2’s complement 16b multipliers, with conditional carry gating in the 72b sparse tree adder, dual

👥 作者与机构

Himanshu Kaul, Mark A. Anders, Sanu K. Mathew, Steven K. Hsu,