An Array of 4 Complementary LC-VCOs with 51.4% W-Band Coverage in 32nm SOI CMOS

📋 论文概要

该论文在32nm SOI CMOS工艺中设计了一个由四个互补LC-VCO组成的阵列，通过选择性切换实现从83.20到104.28GHz的覆盖，占W波段（75-110GHz）的51.4%。解决了毫米波单VCO调谐范围有限的问题，提供了宽带频率生成方案。

💡 主要创新点

• 采用四个互补LC-VCO阵列协同工作，通过频段选择实现W波段51.4%的宽覆盖。
• 在32nm SOI CMOS工艺中实现了最高102.18GHz中心频率下4.13%的调谐范围。
• 通过互补结构和阵列切换机制，兼顾了高频性能与宽带覆盖。

🏷 关键词

📄 原文摘要

Daeik D. Kim1, Jonghae Kim2, Choongyeun Cho1, Jean-Olivier Plouchart3, Mahender Kumar1, Woo-Hyeong Lee1, Ken Rim1 The implemented VCOs tune from 83.20 to 96.98GHz (VCO1, 2, and 3) and 100.07 to 104.28GHz (VCO4), and their measurement results are shown in Fig. 16.3.2. Four VCOs cover 51.4% of W-Band (75 to 110GHz), and they can be selectively switched to the desired band. The fastest VCO shows 4.13% frequency tuning from its center frequency of 102.18GHz, as shown in Fig. 16.3.2. As shown in the graph on the right side of Fig. 16.3.5, the VCO extends the frequency tuning range (FTR) versus oscillation frequency boundary among reported state-of-the-art VCOs. The VCO achieves almost 2× frequency tuning range as compared to that of reported above-100GHz VCOs [2,4]. When 880 VCO arrays in 11-wafers from the same batch are tested, they show an average of 49.7% W-Band coverage with 3.21% standard variation

👥 作者与机构

inductor parameter is estimated and calibrated with EM simulations. The target tuning range is 85 to 105GHz, and 32nm SOI target model parameters are, used to estimate and align the VCOs.