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ISSCC 2009Session 16 · HIGH-SPEED mm-WAVE CIRCUITSmm-Wave65nm CMOS

A 128.24-to-137.00GHz Injection-Locked Frequency Divider in 65nm CMOS

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📋 论文概要

该论文提出了一种工作在128.24至137.00GHz的注入锁定分频器(ILFD),采用65nm CMOS工艺,适用于D波段应用。通过分裂注入和分裂交叉耦合对技术,解决了高频分频器在毫米波频段锁定范围窄和功耗高的问题。

💡 主要创新点

工艺节点
65nm CMOS
重要性
发表年份
ISSCC 2009

🏷 关键词

注入锁定分频器毫米波电路D波段

📄 原文摘要

Owing to the nanoscale CMOS technology, mm-wave circuits have been recently attracting a lot of attention for communication, sensing and imaging systems. Several mm-wave components with operation frequencies around or more than 100GHz have been reported [1-7]. The frequency divider is one of the key building blocks in wireless transceivers. Several W-Band (75 to 110GHz) and D-Band (90 to 140GHz) ILFDs [3-6] and static dividers [7] have been presented. In this work, a 128.24-to-137.00GHz CMOS ILFD with splitinjection and split-cross-coupled pair is presented for D-Band applications. Figure 16.5.1 shows a distributed-LC ILFD [5]. Neglecting the injection MOSFET, Minj, the input impedance is calculated as =LQ = V //& + V ( / + / ) V //&& + V  ( /& + /& + /& ) +    (1) where the capacitors, C1 and C2, indicate the total equivalent parasitic capacitance at the nodes C and D, and A and B (Fig. 16.5.1). Then, the

👥 作者与机构

Bo-Yu Lin, Kun-Hung Tsai, Shen-Iuan Liu

National Taiwan University, Taipei, Taiwan

分类:mm-Wave · 年份:ISSCC 2009