⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文提出了一种可四面拼接的背照式3D集成百万像素CMOS图像传感器，通过三维集成和背照技术解决了传统单片图像传感器在拼接和大面积成像中的局限性。
Jeffrey Knecht1, Andrew Messier1, Kevin Newcomb1, Dennis Rathman1, Richard Slattery1, Antonio Soares1, Charles Stevenson1, Keith Warner1, Douglas Young1, Lin Ping Ang3, Barmak Mansoorian3, David Shaver1 1 MIT Lincoln Laboratory, Lexington, MA Irvine Sensors, Costa Mesa, CA 3 Forza Silicon, Pasadena, CA 2 The dominant trend with conventional image sensors is toward scaled-down pixel sizes to increase spatial resolution and decrease chip size and cost [1]. While highly capable chips, these monolithic image sensors devote substantial perimeter area to signal acquisition and control circuitry and trade off pixel complexity for fill factor. For applications such as wide-area persistent surveillance, reconnaissance, and astronomical sky surveys it is desirable to have simultaneous near-real-time imagery with fast, wide field-of-view coverage. Since the fabrication of a complex large-format sensor on a single piece of silicon is cost and yield-prohibitive and is limited to the wafer size, for
Vyshnavi Suntharalingam1, Robert Berger1, Stewart Clark2,