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ISSCC 2009Session 22 · PA AND ANTENNA INTERFACERF & Wireless40nm CMOS

A Tunable Integrated Duplexer with 50dB Isolation in 40nm CMOS

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📋 论文概要

该论文提出了首个集成在CMOS工艺中的双工器,通过混合变压器的电平衡而非频率选择性来实现隔离,解决了全双工蜂窝应用中集成双工器的隔离难题。

💡 主要创新点

核心指标
50dB隔离
工艺节点
40nm CMOS
重要性
发表年份
ISSCC 2009

🏷 关键词

集成双工器电平衡CMOS

📄 原文摘要

frequency-selective filters for isolation. The stringent isolation requirements prohibit the integration of RF duplexers on silicon and particularly in CMOS technology. However, CMOS technology offers superior tuning and calibration capabilities supported by the integrated digital baseband. This work presents the first integrated duplexer in CMOS technology with an adequate performance for full-duplex cellular applications such as WCDMA and HSPA. The proposed implementation is based on electrical balance of a hybrid transformer rather than frequency selectivity which unfavorably requires high-Q elements. An integrated duplexer should perform two functions: first, it must provide concurrent matching for the antenna, the transmitter (TX), and the receiver (RX), and second it should attenuate the transmitted signal at the RX input to

👥 作者与机构

M. Mikhemar1, H. Darabi1, A. Abidi2, 1

Broadcom, Irvine, CA University of California, Los Angeles, CA 2 Modern RF duplexers rely on

分类:RF & Wireless · 年份:ISSCC 2009